以微波電漿束化學氣相沉積系統成長之奈米碳材及其表面性能分析

A Study of Growth and Surface Performance Analysis of Carbon Nanotube Grown Using Microwave Plasma Jet Chemical Vapor Deposition System

莊元魁(Yuan-Kuei Juang)

指導教授 ： 蘇春熺

國立臺北科技大學/機電學院/機電整合研究所/碩士(2010年)

摘要

本研究主要將微波電漿束化學氣相沉積(Microwave plasma jet chemical vapor deposition, MPJCVD)系統腔體平台，透過PC-Base控制單元，傳送、讀取周邊設備訊號源，並使用自行撰寫的VB程式人機介面，結合CCD camera達到即時監測與控制的目的。此系統最大的特色在於使用高精度的電動缸，取代人工調整微波功率的滑動式短路器檔板位置，並提供近端手動遙控控制模式，以及遠端監控模式，使實驗操作精確性更高、提高變換參數之可靠性，增加日後實驗的多元性。使用高頻結構模擬軟體(HFSS)，以導波波長λg : 173.4 mm的1/4倍為調整各軸滑動式短路器檔板的最小距離，由模擬MPJCVD系統腔體內電場分布的情形，預測電漿可能產生的區域。由模擬結果發現當X軸檔板固定在λg或2/4λg位置時，Y軸檔板為3/4λg及1/4λg，Z軸檔板在3/4λg及1/4λg的位置下之組合，試片上方的蓋板電場最大平均電場值為3.7×103 V/m，經由實驗驗證此位置為產生電漿最佳位置。使用可程式控制之MPJCVD系統成長奈米碳管，分別通入甲烷、氫氣、氮氣，比例為10:90:20 sccm，改變微波功率800~1200 W，皆可成功長出奈米碳管，由拉曼光譜檢測分別在1590 cm-1(D-band)及1321 cm-1(G-band)均有碳管特徵峰值，其中以1000 W的碳管結構最佳ID/IG比為0.84，由場發射量測此碳管之起始電場為0.74 V/um，且具有極佳的疏水特性，接觸角均為150°以上。

關鍵字

微波電漿束化學氣相沉積 ； PC-Base ； 奈米碳管 ； 場發射

並列摘要

Microwave Plasma Jet Chemical Vapor Deposition System in this research is combined with PC-Base and CCD camera programmed and integrated by Visual Basic to communicate with other equipment for monitoring and remote control. The most important feature of this deposition system is that a motorized cylinder is applied for position adjustment of sliding shorts to control the wavelength of microwave, thus the reliabilities during experiments could be precise and more flexible. High Frequency Structure Simulator (HFSS) is introduced for microwave simulation to predict whether plasma will be ignited or not under one fourth of wave-guide wavelength, λg, 173.4 mm. After simulation, we found that the mean electric field under specific positions of three sliding shorts at λg or 2/4λg, 3/4λg or 1/4λg and 3/4λg or 1/4λg X, Y and Z respectively is 3.7×103 V/m, which can be proven experimentally. So, carbon nanotubes can be deposited under these condition and methane, hydrogen and nitrogen are injected into chamber in the proportion of 10:90:20 sccm respectively, the power of microwave is from 800 to 1200W for deposition. All the samples can be easily observed two Raman specific peaks 1590 cm-1 (D-band) and 1350 cm-1 (G-band) and which deposited under 1000W possesses the best ID/IG, 0.84 and whose turn on-field is 0.74 V/um after field emission experiment.And carbon nanotubes have excellent hydrophobic properties, contact angle is 150 ° or more.

並列關鍵字

MPJCVD ； PC-Base ； CNTs ； Field Emission

參考文獻

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