摻雜鋁之p-type氧化鋅薄膜特性分析

The study of Al-doped p-type ZnO thin films

何建志(Jian-Zhi He)

指導教授 ： 王耀德

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2008年)

https://doi.org/10.6841/NTUT.2008.00084

摘要

本論文以超音波噴霧熱解法成長摻雜鋁之氧化鋅薄膜。主要探討在不同的摻雜量與不同的製程溫度之下，對其結構、導電性與光學特性之影響。
在結構分析方面，經由XRD量測得知，我們成功的把鋁摻雜至氧化鋅薄膜中，可發現沒有第二相的現象產生。藉由SEM與AFM對照可知，當晶粒間隙越小時其粗糙度越小。當基板溫度下降時其粗糙度變大。在電性分析方面，藉由霍爾量測得知，當成長溫度在550℃與500℃時，其導電特性為p-type，且最低的電阻率、最高的載子濃度與遷移率分別為3.724(Ω．m)、1.011*1017 (cm-3)、24.456(cm2/Vs)，1.451(Ω．m)、1.343*1017(cm-3)、28.948(cm2/Vs);在成長溫度降至450℃時，樣品轉為n-type，且導電特性變差。在光學分析方面，藉由穿透光譜得知，當鋁摻雜量增加時，能隙值也會跟著上升，且波長在400-700nm之間穿透率可達到80%以上。綜合上述，我們成功的在玻璃基板上以鋁摻雜成長出p-type氧化鋅薄膜，並且在550℃時發現鋁摻雜至1.0at.%，所呈現出來的特性是最佳的。

關鍵字

超音波噴霧熱解法（ultrasonic spray pyrolysis） ； Al doped ZnO

並列摘要

The Al-doped Zinc oxide (AZO) films are prepared by Ultrasonic spraying pyrolysis method on glass substrate. The effects of doping concentration and growth temperature on structural, morphological, electronic and optical properties were investigated in detail.
The X-ray diffraction showed that the films were wurtzite structure. No evidence of any other secondary phases and impurities were detected. The surface morphology analysis by atomic force microscope showed that the increase of substrate temperature leads to decrease surface roughness. The hall measurement showed the decrease in resistivity leads to increase in mobility and carrier concentration. The transmission analysis showed that for visible light wavelengths (400-700nm), the AZO films have an average transmittance of over 80%.
In conclusion, the p-type AZO films were successfully deposited on the glass substrate. The spray deposition of 1.0at.% Al added 0.1M zinc acetate solution at a substrate temperature of 500℃ and 550℃ was found to be optimum for the deposition of good quality p-type AZO films.

並列關鍵字

Ultrasonic spraying pyrolysis method ； Al-doped ZnO

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