透過您的圖書館登入
IP:3.136.154.103
  • 學位論文

以自聚合之團聯共聚合物為模仁架構奈米結構的研究

Study of Forming Block Copolymer Template by Self-Assembly for Nanostructure

指導教授 : 嚴煜良
若您是本文的作者,可授權文章由華藝線上圖書館中協助推廣。

摘要


在本文,我們使用具有分子自聚合特性的雙團聯式和參團聯式共聚合物在基材上形成以傳統式光顯影技術不容易達到的奈米尺寸圖像。其中高分子共聚合物化學材料係採用已經商業化的聚苯乙烯-聚丁二烯和聚苯乙烯-聚戊乙烯-聚苯乙烯。首先,我們將共聚合物先與甲苯混合攪拌成均勻的共聚合物溶液,再以旋轉塗佈法施佈於基材上,接著在真空下以超過高分子共聚合物的玻璃轉換溫度加熱。如此基材上具有自我聚合特性的共聚合物分子會發生微相分離而產生圖像,形成如球狀、柱狀、層狀等。周期性圖像大小和尺寸決定於聚合物分子數和分子體積分率等。我們選定砷化鎵晶片、矽晶片、以及掺雜硼的矽晶片為基材,利用在基材上的高分子共聚合物薄膜圖像來架構奈米結構。以Alpha-step profile meter和 Scanning electron microscope(SEM) 分別來分析共聚合物薄膜的厚度和球狀圖像,並嘗試以反應式離子蝕刻(RIE)方式在基材上蝕刻出奈米結構的量子點。

關鍵字

自聚合 共聚合物 微相分離

並列摘要


In this study, we used the self-assembly of the diblock and triblock copolymers to produce patterns on a substrate in an attempt to reach to the nanometer length scale structure which is not easily accessible by conventional lithography techniques. Those diblock copolymer and triblock copolymer, that is the poly (styrene -b- butadiene) and poly (styrene-b-isoprene b- styrene) are used. Polymers were spin-coated from solution onto substrates and annealed above their glass transition temperature to induce microphase separation and produce ordered patterns. The characteristic spacing of the patterns mainly depends on the molecular weight among others. In order to use these patterns as a template for nanostructure, we studied the pattern formation of block copolymers in thin films on substrates, such as silicon wafers, GaAs wafers, etc. Images of the microstructures in films on a substrate were taken by scanning electron microscope (SEM). Selective staining of the PB domains by vapors of OsO4 and reactive ion etching (RIE) to transfer the internal microstructures to the substrate surface made before image taking.

參考文獻


[1] Kai-An cheng, Ren-Horng Maa, Tien-Chi Lin, Yu-Fen Huang, Hsuan-I Liu
-luminescence from InGaAs / InP Quantum Wires and Boxes " Apply. phys
Dots " Encyclopedia of nanoscience and nanotechnology edit by H. S. Na-
wa vol. 10, 2004, pp175-189.
" Encyclopedia of nanoscience and nanotechnology edit by H. S. Nalwa vol. 9,

延伸閱讀