Sol-Gel法製備Zn2SiO4:Eu3+ or Tb3+螢光體與其光激發光特性之研究

Photoluminescence of Zn2SiO4:Eu3+or Tb3+ Phosphor Prepared by Sol-Gel Processes

陳哲杰(Che-Chieh Chen)

指導教授 ： 徐開鴻

國立臺北科技大學/工程學院/材料科學與工程研究所/碩士(2008年)

摘要

本研究利用溶膠-凝膠法(Sol-Gel)製備Zn2SiO4:Eu3+和Zn2SiO4:Tb3+螢光體，探討在不同的製程參數下對其微結構與光激發光特性之影響，以了解Sol-Gel法製備的特徵。實驗結果顯示在燒成溫度為1100℃即可合成Zn2SiO4 螢光體，而傳統固態反應法之燒成溫度約為1300℃，表示可以有效降低燒成溫度。在螢光體粒徑方面，以溶膠-凝膠法合成之Zn2SiO4 螢光體其平均粒徑約為200nm較利用固態反應法的100μm為小。光譜分析方面，Zn2SiO4:Eu3+螢光體呈現紅色特性光，最強吸收特性峰值為535nm，以535nm波長激發產生5D0→7F0、5D0→7F1、5D0→7F2、5D0→7F3、5D0→7F4 、5D0
→7F5等躍遷的放射峰，以5D0→7F2為最強的放射峰，波長為610nm；而Zn2SiO4:Tb3+螢光體呈現綠色特性光，最強吸收特性峰值為486nm，以486nm波長激發產生、5D4→7F5、5D4→7F4、
5D4→7F3、5D4→7F2等躍遷的放射峰，以5D4→7F5為最強的放射峰，波長為544nm。

關鍵字

螢光體 ； 溶膠凝膠法 ； 矽酸鋅 ； 銪 ； 鋱

並列摘要

The research is tried to synthesize Zn2SiO4:Eu3+or Tb3+ phosphors by using sol-gel method. Study several
controlling factors that could affect the phosphor’s luminescence characteristics, such as firing temperature, firing time, doped with different amounts of the activator. The results showed that the firing temperature for synthesizing Zn2SiO4 phosphor will be at 1000℃﹐via solid-state route as compared to 1300℃.Therefore﹐we can effectivly decrease the firing temperature of Zn2SiO4:Eu3+or Tb3+ phosphors by using sol-gel method. The average particle size of Zn2SiO4:Eu3+ or Tb3+phosphors prepared by using sol-gel method is 200nm that is much small than the phosphors prepared by solid-state method is 100μm.In spectrum analysis﹐we can observe the red light wavelength of Zn2SiO4:Eu3+ phosphors which have the strongest absorption peak at 535nm. The emission spectra of Zn2SiO4:Eu3+ phosphors excited by 535nm are assigned to the transitions 5D0→7F0﹐5D0→7F1﹐5D0→7F2﹐5D0→7F3﹐5D0→7F4﹐and 5D0→7F5﹐respectively. Additionally﹐the 5D0→7F2 transition at 610nm is the strongest emission peak.We can observe the green light wavelength of Zn2SiO4:Tb3+ phosphors which have the strongest absorption peak at 486nm. The emission spectra of Zn2SiO4:Tb3+ phosphors excited by 486nm are assigned to the transitions 5D4→7F5 ﹐5D4→7F4﹐5D4→7F3﹐and 5D4→7F2﹐respectively. Additionally﹐the 5D4→7F5 transition at 544nm is the strongest emission peak.

並列關鍵字

phosphor ； sol-gel method ； Zn2SiO4 ； Eu3+ ； Tb3+

參考文獻

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