以超音波噴霧成長鋰摻雜之p-type氧化鋅薄膜

Growing Li-doped p-type ZnO thin film by ultrasonic spray method

陳冠宇(Kuan-Yu Chen)

指導教授 ： 王耀德

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2008年)

https://doi.org/10.6841/NTUT.2008.00104

摘要

本論文是透過自行架設的超音波噴霧系統，在玻璃基板上成長摻鋰之p-type氧化鋅薄膜。在分析方面，以X光繞射儀 (XRD) 鑑定晶體結構，以原子力顯微鏡(AFM)、掃瞄式電子顯微鏡 (SEM) 觀察表面形貌，以霍爾量測儀探究其電學特性。 從XRD分析得知，隨著摻雜濃度的提升，（101）方向之繞射峰會先往大角度位移，再往小角度位移回來。經霍爾量測發現，在製程溫度為550℃，且摻雜濃度為1.0at.％時，會有最低電阻率0.258 Ω -cm，最高載子濃度3.44×1018 cm-3 與遷移率7.05 cm2/Vs。因此，本實驗成功在常壓下，利用架設容易、價格低廉的超音波噴霧系統，於玻璃基板上成長出品質良好之鋰摻雜p-type氧化鋅薄膜。

關鍵字

超音波噴霧 ； 摻鋰氧化鋅

並列摘要

In this study, the p-type ZnO films were grown on the glass substrates by ultrasonic spray method. The structure properties of ZnO thin films were characterized by X-ray diffraction (XRD). The surface morphology was characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The electric properties was measured by Hall-effect measurement.
Results of X-ray diffraction reveal that the Li atoms were successfully occupied the Zn sites, and make the (101) peak shift to higher value. The Hall-effect measurement shows that we obtained the best electronic results when the grown temperature was at 550℃. The ZnO with Li-doping of 1.0at.％ exhibits a low resistivity of 0.258 Ω -cm, high hole concentration of 3.44×1018 cm-3 and high mobility of 7.05 cm2/Vs. In conclusion, the Li-doped p-type ZnO films were successfully grown by ultrasonic spray method.

並列關鍵字

ultrasonic spray method ； Li-doped ZnO

參考文獻

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