製程參數對氣膠沉積法製備Ba2Ti9O20介電陶瓷厚膜之影響

Effects of Processing Parameters on the Ba2Ti9O20 Thick Films Prepared by Aerosol Deposition Method

何松翰(Song-Han Ho)

指導教授 ： 王玉瑞 ； 王錫福

國立臺北科技大學/工程學院/資源工程研究所/碩士(2008年)

https://doi.org/10.6841/NTUT.2008.00179

摘要

本實驗利用氣膠沉積法在室溫下成功製備Ba2Ti9O20(B2T9)厚膜沈積在Pt/Ti/Si基材上。此沈積方法之特色在於沉積速率快(可達數μm/min)，而可直接成長出二維之圖紋。本實驗經由不同種類之攜帶氣體及退火參數下，探討製程參數對Ba2Ti9O20厚膜的相組成成份及介電性質、微結構之影響。
實驗結果顯示，在不同的攜帶氣體下，對厚膜組成之相成分分析上，其結構和晶粒尺寸並未造成太大之影響，不過可觀察到X-ray繞射圖之繞射峰具有寬化的現象。在SEM微結構觀察中，利用氣膠沈積法製備出的Ba2Ti9O20厚膜具有緻密的膜層結構。在電性量測方面，不同攜帶氣體製備的Ba2Ti9O20厚膜，其介電常數並不因偏壓的改變而有太大的變化。攜帶氣體為O2製備之厚膜介電常數為32，介電損失為0.03；以攜帶氣體為Ar製備之厚膜介電常數為41，介電損失為0.04。對於漏電流對電場的觀察，Ba2Ti9O20厚膜具有相當低之漏電流密度，以攜帶氣體O2製備之厚膜的漏電流密度為1.4×10-8 A/cm2，以攜帶氣體為Ar製備之厚膜的漏電流密度為3.9×10-11 A/cm2。
Ba2Ti9O20厚膜經過不同溫度退火後，從X-ray繞射及SEM微結構分析中，並沒有明顯的變化。而介電常數、介電損失及漏電流密度則會隨退火溫度增加而上升。而在O2、N2及air中退火，Ba2Ti9O20厚膜在X-ray繞射及SEM微結構分析中，並沒有明顯的變化。而在低氧分壓的氣氛中退火，會造成介電常數、介電損失及漏電流密度上升。

關鍵字

Ba2Ti9O20厚膜 ； 氣膠沉積法 ； 介電常數 ； 漏電流

並列摘要

The aerosol deposition method is utilized to deposit Ba2Ti9O20 (B2T9) thick film on the Pt/Ti/Si substrate at room temperature. The efficiency of this method is high and the 2-dimensional pattern can be established directly. Through the control of various kinds of carrier gases and annealing parameters, the influence of processing parameters on the phase components , dielectric properties and microstructures of the Ba2Ti9O20 thick film are investigated in this study.
The results show that the composition and crystal structures of the thick film do not change with differing carrier gas, however, the width of peaks on XRD traces are broader than that in raw powder. From cross-sectional SEM image analysis, the Ba2Ti9O20 films are found to be dense. High dielectric constant and good voltage stability can be obtained from the measurements of electrical properties. Dielectric constant increased with decreasing oxygen partial pressure of carrier gas. Dielectric constant of Ba2Ti9O20 thick film prepared by O2 was 32 and dielectric loss was 0.03. Dielectric constant of Ba2Ti9O20 thick film prepared by Ar was 41 and dielectric loss was 0.04. Leakage density were 1.4×10-8 and 3.9×10-11 A/cm2 for Ba2Ti9O20 film prepared by O2 and Ar.
The results show that the composition and crystal structures of the thick films do not change with changing annealing temperatures. Dielectric constant and leakage density increased with increased annealing temperatures. Dielectric constant and leakage density of Ba2Ti9O20 thick films do change with changing annealing atmospheres.

並列關鍵字

Ba2Ti9O20 thick film ； aerosol deposition method ； dielectric constant ； leakage density

參考文獻

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