利用磁控濺鍍法與熱氧化法製作ZnO/GaP/Cu2O異質接面太陽能電池及其特性之研究

Characteristic of ZnO/GaP/Cu2O heterostructure and its solar cell applications

林義峰(Yi-Feng Lin)

指導教授 ： 陳隆建

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2013年)

https://doi.org/10.6841/NTUT.2013.00220

摘要

本論文是利用射頻磁控濺鍍法，分別以濺鍍過程中通氧並改變基板溫度所得P-type氧化亞銅薄膜(Cu2O)，以及濺鍍銅(Cu)薄膜再利用熱氧化法獲得P-type氧化亞銅薄膜，先將ZnO製作於銦錫氧化物(ITO)上，依序疊上磷化鎵(GaP)作為緩衝層，氧化亞銅(Cu2O)作為P-type吸收層形成Glass/ITO/ZnO/GaP/Cu2O/Ag之異質接面太陽能電池。
兩種不同製作方法的P-typ Cu2O與N-type ZnO，分別利用" XRD "與" FSEM "探討其元素成分及表面結構分析，利用" Hall量測 "來探討載子濃度、載子移動率、電阻率的差異性，再利用"光致螢光 "(Photoluminescence)來測量出氧化亞銅的能隙(Energy Gap)以及探討其雜質缺陷，最後再利用Ag做為金屬電極，利用I-V量測系統探討電池之I-V特性。

關鍵字

氧化亞銅 ； 磷化鎵 ； 氧化鋅 ； 熱氧法 ； 射頻磁控濺鍍系統

並列摘要

There are two ways to fabricate cuprous oxide (Cu2O) thin-film in this paper. One is using “RF reactive magnetron sputtering” to prepared P-type Cu2O thin-film by using O2 as reflective gas and changing the temperature of substrate.
The other is using “RF reactive magnetron sputtering” to prepared Cu thin-film and then it annealed in different temperatures. The Cu2O film will be prepared on Glass/ITO/ZnO/GaP substrate to fabricate “Glass/ITO/ ZnO/GaP/ Cu2O/Ag” hetero-structure solar cells. The Cu2O/ZnO heterostructure is confirmed by FSEM(Field Emission Scanning Electron Microscopy) and XRD( X-ray Diffractometer measurements). The carrier mobility ,carrier concentration and resistance of the film were measured by Hall measurement ,its Energy Gap of the film and defect were obtained by Photoluminescence. After all , We will Optimize the device and use I-V measure-system to discuss the characteristics of device.

並列關鍵字

Cu2O ； GaP ； ZnO ； Thermal Oxidation ； RF reflective sputtering

參考文獻

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