- 學位論文
應用田口法於奈米銀絲導電薄膜Nd:YVO4雷射劃線最佳化分析
Parameter optimization of Nd:YVO4 laser for straight scribing on silver nanowire based conductive thin films by Taguchi method
摘要
本研究以使用高精度532nm波長的Nd-YVO4雷射劃線設備，取代了傳統濕製程來進行雷射劃線實驗。其方式是將雷射聚焦於奈米銀線導電薄膜上，並除去鍍於表面之奈米銀絲的無汙染製程實驗。實驗的主要目標是在雷射劃線後能夠不傷及底層的可撓性PET(Polyethylene terephthalate)基板而且能夠將批覆在薄膜上的奈米銀絲透過雷射去除掉使其造成短路現象。 本文章探討雷射刻劃線段於奈米銀絲導電薄膜製程，為了能達到理想線寬的目標，且在不考慮各因子間的交互作用下，透過田口法，設定不同雷射參數，其中主要以雷射功率、雷射頻率、雷射焦距位置、雷射劃線速度為四個主要控制因子，並經由田口法中的直交表、主效果分析、變異數分析理論找出最佳化參數。最後在95%的信賴區間分析下驗證了最佳參數所畫出的線寬是正確的並且此實驗模式是夠精確合理的。
並列摘要
This study presents the laser scribing experiments on silver nanowire based conductive thin films by using the high-precision Nd-YVO4 (wavelength, 532nm) laser to replace the traditional wet etching process. This is a non-polluting processes due to the laser beam is directly focused on conductive thin films and to vaporize the silver nanowire which is coated on the thin film. The main objective of this study is to perform the laser scribing experiments without damaging the flexible PET (Polyethylene terephthalate) substrate and cut off the silver nanowire on the thin film. To achieve the desired scribing linewidth, and without considering the interaction effect among factors, the Taguchi method was used to study the parameters optimization of the laser scribing experiments. The laser power, laser frequency, focusing position and scribing speed are selected as four main control factors and the optimum parameters is determined by the orthogonal array, main-effects analysis and the analysis of variance theory in the Taguchi method. Finally, under the analysis of 95% CI (Confidence Intervals), the validation of the scribed linewidth according to the optimum parameters is correct and this experimental model is reasonably accurate.