製程中晶圓(wafer)及晶圓傳送盒(FOUP)會受到許多次汙染,以蝕刻製程為例,晶圓經過蝕刻製程, 汙染物以氣態分子汙染物(AMC, Airborne Molecular Contaminant)形式揮發後附著在FOUP壁面,進入下一道製程,附著於FOUP壁面的AMC可能再次揮發,並附著於下一批晶圓,如此反覆幾道程序,會嚴重影響晶圓的製程良率,所以製程時FOUP開門瞬間的氣流場非常重要。本文利用計算流體力學軟體,針對不同FFU下吹氣流流速(0.3m/s~0.7m/s)與不同導流管填充流量(45LPM、90 LPM、135 LPM、180 LPM、270 LPM、360LPM),模擬 FOUP/LPU在晶圓盒載卸動作下FOUP內部之流場行為及內部容易滯留汙染微粒之區域。模擬發現FOUP門完全開啟時,FFU下吹氣流從開口處往FOUP流入,如此不但無法將AMC帶走,反而將AMC全部吹至壁面。若FFU下吹氣流流速(0.3m/s)較低時,外部氣流影響FOUP微環境並不大。門扉開啟情況下導流管噴射氣流均勻的將FOUP內部氣流導引至微環境中,但導流管噴射氣流與FFU逆向氣流會於晶圓間隔處形成擾流;其中最佳情況以在開口處上方加裝氣簾其流量為導流管二分之一(0.125m/s、0.25m/s、0.375m/s、0.5m/s、0.75m/s、1m/s),FOUP於門扉開啟情況下最利於將汙染物向微環境移除。
The FOUP plays an important role for contamination control. Wafer and FOUP may be contaminated during the manufacturing processes. An example is that after the processes of etching, the contaminant, as a form of airborne molecular contaminant (AMC), may evaporate, deposit, and contaminate wafers in the later processes. In this study, the CFD software-FLUENT was applied to simulate the effects of different FFU velocity (0.3m/s ~ 0.7m/s) and different diffuser flow (45LPM, 90 LPM, 135 LPM, 180 LPM, 270 LPM, 360LPM), simulate the FOUP / LPU in FOUP containing unloading behavior and internal flow fields inside the area easily contaminated particulate retention. Results show that in the instance when the FOUP door is just opening, the downward flow from FFU was toward to the upper part of the FOUP, AMC can’t take away but all blown to the wall. When the FFU air velocity was lower (0.3m/s), external airstream affecting FOUP microenvironment is not large. For FOUP with inject plenum, the collision of air jet from the inject plenum and the invading airflow from FFU forms the turbulence between the gaps of wafers; one of the best situations is the installation of air curtain in the upper part of the FOUP, and flow rate is one half of the flow purge (0.125m/s, 0.25m/s, 0.375m/s, 0.5m/s, 0.75m/s, 1m/s). This case is the most favorable to remove pollutants in the microenvironment.