本研究是利用射頻磁控濺鍍法的薄膜鍍層技術來製備高緻密性、成份均勻的釔安定氧化鋯高溫固態電解質薄膜。以8 mole%的氧化釔(Y2O3)添加氧化鋯(ZrO2)作為濺鍍靶材,進行YSZ電解質薄膜的鍍膜製程。在工作壓力為10 mTorr,Ar:O2 = 30:1 sccm氣氛下,可以發現當基板溫度在300oC進行濺鍍,可得到最緻密之薄膜。 接著藉由不同的鍍膜時間製備出不同厚度(1.8~10.5 ?m)的YSZ電解質薄膜於NiO-SDC陽極上,最後以網印法製備LSM/YSZ陰極於YSZ電解質層上,完成單元電池之製備。結果發現,當薄膜厚度為1.8 ?m和10.5 ?m時,應用溫度於800°C所得到的開路電壓為0.96 和0.88 V,最大電功率密度分別為0.67 和0.19 W/cm2,而歐姆阻抗為0.12、0.69 Ω•cm2,極化阻抗為0.19、0.44 Ω•cm2,由結果可以發現電解質厚度為1.8 ?m受到極化阻抗影響較歐姆阻抗大且有最佳之電性。
In this study, electrolyte of Yttria-stabilized Zirconia (YSZ) films was prepared on NiO-SDC anode substrate by magnetron RF sputtering at oxygen and argon atmosphere. Various thicknesses of electrolyte films ranging from 1.8 ?m to 10.5 ?m were deposited at a substrate temperature of 300°C and an atmosphere of 30 sccm Ar and 1 sccm O2. It was found that the cell performances of the single cells are strongly dependent on the thickness of the electrolyte layer. For instance, the open circuit voltage and maximum power density of single cell with 1.8 ?m YSZ electrolyte at 800°C were 0.96 V and 0.67 W/cm2, respectively, while 0.88 V and 0.19 W/cm2 for 10.5 ?m YSZ film. The thickness effects of various electrolyte films on the electrochemical performances of SOFC cells were compared and discussed in term of the conduction nature of the electrolyte films.