- 學位論文
製作熱氧化絕緣層並運用在p-磷化銦蕭特基太陽能電池性能提升之研究
Using Thermal Oxidation Insulator Layer to Enhance p-InP Schottky Solar Cell Performance
摘要
本研究探討的是找出最佳金屬-絕緣層-半導體(MIS)的長氧化層溫度和時間並運用在磷化銦(InP)蕭特基太陽能電池性能之提升。MIS太陽能電池的優點為利用薄薄的氧化層(<20Å)，有效的降低多數載子在金屬與半導體之間的傳輸速率並受到限制，減少電流的熱離子放射分量所形成的暗電流(Dark Current)，進而提升效率。 針對不同溫度及不同氧化時間與元件串聯電阻、光電轉換效率之間的關係，本研究找出最佳化厚度的氧化層來降低元件逆向飽和電流(Reverse saturation current, I0)及提升蕭特基能障(Schottky barrier height, ΦB)，最後提高磷化銦蕭特基太陽能電池的開路電壓(Open circuit voltages, Voc)和短路電流密度(Short circuit current density, Jsc)。 本文製作出Au/p-InP(MIS)蕭特基太陽能電池，有效受光面積約為20.25 mm2。在無照光環境下，先以I-V量測蕭特基元件及可計算出理想因子(Ideality factor, n)、蕭特基能障高度、串連電阻。另外，在AM1.5G的太陽光模擬環境下進行元件特性量測(電極線寬18 μm及遮蔽率12.73 %)，初步獲得Voc為0.76 V，Jsc為27.62 mA/cm2，填充因子(Fill factor, FF)為47 %及轉換效率(Conversion efficiency, η)達7.53 %。
並列摘要
This study is to find the best conditions of the growth temperature and time of thermal oxidation insulator layer for metal-insulator-semiconductor (MIS) to improve the indium phosphide (InP) Schottky solar cell performance. The advantages of MIS solar cells using a thin oxidation layer (<20Å) are to reduce the transfer rate of the majority carriers which are between the metal and semiconductor, and reduce the dark current formed by thermionic emission effect, and thus enhance the conversion efficiency. For different temperatures and different oxidation time, we discuss the relationship between the series resistance of diode and the conversion efficiency of solar cell. We find out the optimal thickness of the oxidation layer which to reduce the reverse saturation current (I0) and enhance the Schottky barrier height (ΦB). Finally, increasing in the open circuit voltages (Voc) and short-circuit current density (Jsc) of InP Schottky solar cell are obtained. In this thesis, the Au/p-InP (MIS) Schottky solar cells with the active area of 4.5×4.5 mm2 are fabricated. We utilize the I-V measurement to obtain ideal factor (n), Schottky barrier height, series resistance. Under the AM1.5G illumination condition (grid pattern with line width of 18 μm and shadow of 12.74 %), the open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF) and conversion efficiency (η) are 0.76 V, 27.62 mA/cm2, 47 %, and 7.53 %, respectively.