- 學位論文
以噴霧熱解法備製摻銅氧化鋅薄膜之研究
The Spray-Pyrolysis Deposition of Cu-doped ZnO Thin Films
摘要
本論文使用架設簡單、製程快速及成本低廉的超音波噴霧熱解法，在藍寶石基板上備製出摻銅之氧化鋅（CZO）薄膜，以探討銅之摻雜對氧化鋅晶體結晶結構與導電特性之影響。沉積之樣品分別利用X光繞射儀（XRD）觀察晶體結構以及霍爾（Hall）量測儀量測薄膜電性。 本實驗分別以氮氣(N2)與氧氣(O2)作為導流氣體，在基板溫度600°C沉積CZO薄膜。從XRD分析得知，氧化鋅薄膜皆在（002）方向具有良好的結晶性，隨著摻雜濃度比例的增加，（002）方向繞射峰值會向大角度位移，說明摻雜物是以取代的方式進入氧化鋅。而霍爾量測分析指出，摻雜濃度為1at％時，CZO薄膜轉變成P型半導體。導流氣體為氧氣所成長之薄膜於氧氣中退火30分鐘後具有最低電阻率1.17×10^-3 Ω-cm，最高之載子濃度2.61×10^20 cm-3與遷移率22.04 cm2/Vs。因此，本實驗利用超音波噴霧熱解法製作摻銅之氧化鋅薄膜，可成功摻雜出具有良好電性的P型半導體薄膜。
並列摘要
In this study, we investigated the Cu-doping effects on ZnO films deposited on sapphire by ultrasonic spray technique. The structure properties of ZnO thin films were characterized by X-ray diffraction（XRD）. The electric properties were analyzed by Hall-effect measurement. In this study , we deposited the CZO film at temperature of 600°C under using nitrogen (N2) and oxygen (O2) as the diversion of gas. As results of X-ray diffraction revealed that the CZO thin films had great crystallinity on the c-axis direction, and made the（002）peak shifted to higher angle value for higher doping ratio. The Hall-effect measurement showed that the best p-type Cu-doped ZnO films were obtained when 1at% of copper(II) were doped at temperature of 600°C under these optimal deposition conditions, the film showed a low resistivity of 1.17×10^-3 Ω-cm, high hole concentration of 2.61×10^20 cm-3 and high mobility of 22.04 cm2/Vs.. In this study, the Cu-doped p-type ZnO thin films were successfully grown by ultrasonic spray pyrolysis with high carrier concentration, high mobility, and low resistivity.