- 學位論文
側壁封裝電子元件之技術開發
Encapsulating the contact pads of electronic devices with spacer process
摘要
近年來，光電產業蓬勃發展，對於更輕薄的平面顯示器之需求日益增加，因此在可撓曲塑膠基板上製作有機發光二極體元件（OLED）無疑是下一世代平面顯示器的主流。以複合多層薄膜沉積方法作為光電元件的封裝方式，受到業界的重視，此種封裝方式可降低元件封裝後整體厚度。然而低溫製程所製作的多層膜的有機半導體元件使用壽命短，失效的主要原因為外部環境中水氣及氧氣穿透保護膜進入元件內部。依照半導體蝕刻製程將接觸電極上複合薄膜移除，水氣與氧氣會經由接觸電極上側壁的接縫處穿透到元件內部,導致元件壽命衰退。本研究探討利用複合間壁層的方式將接觸電極因蝕刻開口後所造成的接縫再予以包覆,來增強元件壽命和可靠度。 首先，利用微影製程製作100 X100 μm的接觸電極位置圖案，之後以磁控濺鍍法製備氣體阻障層於元件封裝。其元件封裝薄膜層分別為：SiO2, Al, SiO2/Al, SiO2/Al(two pairs)，接著於表面沉積SiO2膜，以蝕刻技術把表面薄膜去除，形成接觸電極側壁層。 實驗結果發現經由水氣穿透率測量,測試條件為溫度32°C及濕度100% ，Al/SiO2 (two pairs)封裝層製作SiO2雙側壁擁有良好阻水氣效果，從原本開口結構水氣穿透率2.50X10-5g/m2-day可降至1.21X10-5g/m2-day 。本研究成功以簡單的結構設計驗證並開發出水氣阻隔技術。
並列摘要
Recently, the optoelectronic industry develops rapidly to increase the requirement of thinner and lighter properties for flat panel display products. Undoubtedly, the fabrication of organic light emitting diode (OLED) on flexible plastic substrate was the major technique in the next flat display generation. The encapsulation of organic semiconductor devices with the concept of multilayer films onto the devices and conductors is the major trend of producing thin and light weight devices for the industrial and research. However, ,the low process temperature of the multilayer films onto the devices exhibits with poor film quality and will cause leakage path by moisture and oxygen which will induce the failure of products after the opening process of contact pads. In this study, to minimize the possible leakage path by moisture and oxygen in the devices, a new technique fortifying the lifetime and reliability of flexible device will be introduced on protecting the sidewall of contact pads after the opening process. The study started with the photolithography process producing 100 x100 μm2 pattern devices to simulate the opening position of contact pads. We encapsulated the device by gas barriers that were produced with magnetron-sputtering system. The gas barriers of thin film layer structure are made with SiO2, Al, SiO2/Al, SiO2/Al (two pairs) respectively and etched in blanket way to form the SiO2 spacer films onto the sidewall of contact pads. By measuring the water vapor transmission rate (WVTR, at 32°C and RH 100%), it was found that the gas barriers of the two sidewall of Al/SiO2 (two pairs) performed well to prevent degradation; It was reduced from the original 2.50x10-5 g/m2-day to 1.21x10-5 g/m2-day after processing. This study has successfully developed a simple sidewall structural design barrier technology.