- 學位論文
成長氧化鋅奈米線與氧化鎂鋅薄膜之異質結構
Growth of ZnO nanowires/MgZnO thin film Heterostructures
摘要
本研究利用熱蒸鍍法成長氧化鋅準直奈米線，進行兩部分的研究，第一部份為氧化鋅奈米線(ZnO nanowire) 成長於氧化鎂鋅（MgZnO）薄膜結構上。我們以脈衝雷射蒸鍍法(pulsed laser deposition,PLD)成長方式，蒸鍍氧化鎂鋅（MgZnO）靶材於藍寶石（sapphir）基板上長成氧化鎂鋅（MgZnO）薄膜，再以熱蒸鍍法的方式將純度4N（99.99％）氧化鋅源於在層上成長為氧化鋅奈米線(ZnO nanowire)。本研究改變氧化鎂鋅（MgZnO）薄膜參雜量，把樣品做掃描式電子顯微鏡（scanning electron microscope，SEM）、光激螢光光譜（photoluminescence，PL）、X-ray繞射儀（XRD）及原子力顯微鏡（atomic force microscopy，AFM）等分析。 第二部份為氧化鋅奈米線(ZnO nanowire)與氧化鎂鋅（MgZnO）薄膜之異質結構成長。高溫爐先成長氧化鋅奈米線(ZnO nanowire)，以脈衝雷射蒸鍍法的方式成長氧化鎂鋅（MgZnO）薄膜於氧化鋅奈米線(ZnO nanowire)上。本研究用不同參雜量氧化鎂鋅（MgZnO）薄膜於氧化鋅奈米線(ZnO nanowire)上，以及控制雷射發數改變薄膜厚度，由光激螢光光譜、XRD繞射儀、原子力顯微鏡等分析其薄膜之特性。
並列摘要
This thesis consists of two parts.In the first part, ZnO nanowires were synthesized via the catalyst-free thermal evaporation method on a MgxZn1-xO thin film which is formed by pulsed laser deposition (PLD) on the c-plane sapphire substrate and is acting as an interlayer between the ZnO nanowires and the c-plane sapphire substrate. Density of ZnO nanowires are affected and can be controlled via the content of Mg of the underlying thin film. The scanning electron microscopy demonstrated that the vertically well-aligned ZnO nanowires arrays will become low-density when the content of Mg is increased, and vice versa. In the second part, the diameter of 20–40 nm high- density vertically well-aligned ZnO nanowire arrays were fabricated on c-plane sapphire substrate with a ZnO interlayer and then covered with MgxZn1-xO nanostructures by PLD. The morphology and the luminescence of the resulted nanostructures strongly depend on the Mg content in the target.