利用XRD分析成長於不同緩衝層/基板之氮化銦特性

XRD analysis of InN films grown on different buffer layers and substrates

郭昱賢(Yu-shain Gou)

指導教授 ： 張本秀

國立臺北科技大學/工程學院/資源工程研究所/碩士(2011年)

https://doi.org/10.6841/NTUT.2011.00375

摘要

本論文主要探討退火與基版/緩衝層以及離子掺雜對InN結晶品質與應變之影響。
在應用上，InN通常以異質磊晶方式成長於藍寶石以及矽基板上。一般會於基板上再成長一層或多層緩衝層，使進一步改善薄膜品質；同時藉由掺雜Ga使成InxGa1-xN三元化合物以改變光學特性；另一方面也會藉由掺雜鎂離子以調整其電性。為了探索這些因素對InN晶格產生的影響，我們以XRD技術來分析InN薄膜結晶品質與應變。
我們的實驗方法包括XRD之θ-2θ 以及搖擺曲線(ω-scan rocking curve)兩種量測模式，以Scherrer 公式以及應變公式為基礎之Williamson-Hall 作圖法分析薄膜結構之縱向相干長度(即沿薄膜厚度方向無缺陷之長度)與晶格應變程度；由搖擺曲線(ω rocking curve)量測模式得到之半高寬可以定性上得知薄膜結構之側向相干長度與晶粒不同平面傾斜角(tilt-angle)之程度。
我們的結果顯示退火處理可使InN薄膜縱向相干長度增加，應變減少。基板/緩衝層以及離子掺雜均會對InN之薄膜結構造成影響；應變中以矽基板最大；而以Sapphire/GaN/In0.3Ga0.7N最小；離子掺雜則使InN薄膜縱向相干長度減少，適當退火處理參數可以使調整InN縱向相干長度與應變，樣品B(Sapphire/GaN/In0.9Ga0.1N)之ω-2θ所得FWHM為所有樣品中最小，表示其整體結晶品質最好。

關鍵字

氮化銦 ； 三氮族半導體 ； X光繞射 ； Williamson-hall plot ； ω rocking curve

並列摘要

In this thesis, we study the effect of annealing temperature, substrate/buffer layers and ion doping on crystal qualities and strain of indium nitride（InN）thin films by x-ray diffraction (XRD).
InN thin films were grown sapphire and silicon substrates by heteroepitaxy. Different buffer layers and ion doping were used to study their effects on structural properties of InN thin films. For application, InxGa1-xN ternary compound can alter InN optical properties and their electrical properties would be changed by Mg-doping. We use XRD analysis to study the film qualities and strain due to these factors.
In the experiment, qualities of InN thin films can be identified by θ-2θand ω-2θ scan in XRD. The vertical coherence length and strain of InN thin films can be inferred through Williamson-Hall plot, which is based on Scherrer formula and strain formula.
The average values of the tilt and lateral coherence length are related to the full-width at half maximum (FWHM) of the X-ray rocking curve.
Our result shows that the vertical coherence length of InN film increases and their strain decreases by annealing process. Film structures were influenced by substrate/buffers and ion doping. The largest strain results from Si substrate and the smallest strain results from sapphire/GaN/In0.3Ga0.7N. The vertical coherence length of InN decreases by Mg-doping. Proper annealing condition can adjust the vertical coherence length and strain. The FWHM value of x-ray (0002) rocking curve of sample B (Sapphire/GaN/In0.9Ga0.1N) represents best crystal quality.

並列關鍵字

InN ； Ⅲ-Nitride semiconductor ； XRD ； Williamson-Hall plot ； ω rocking curve

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