氧硫化鋅亞穩態合金薄膜光學特性之研究

Growth and Characterization of Metastable ZnS1-xOx Thin Films

吳堉廷(Yu-Ting Wu)

指導教授 ： 洪魏寬

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2008年)

摘要

利用脈衝雷射蒸鍍法(pulsed laser deposition,PLD)的沉積方式，先蒸鍍氧化鋅緩衝層(ZnO buffer layer)於C面藍寶石(sapphire)基板上，再蒸鍍ZnS靶材在不同氧壓下合成0≦x≦1的ZnS1-xOx薄膜。以X-ray繞射分析在一系列的ZnS1-xOx薄膜中，有氧化鋅緩衝層(ZnO buffer layer)的ZnS1-xOx薄膜在半高寬（Full Width at Half Maximum）或峰值強度上都有明顯變窄或變強，代表薄膜有較好的品質。
在穿透光譜量測方面，發現以氙燈作為燈源的穿透系統，在紫外波段會使ZnS1-xOx薄膜的晶格表面結構產生變化，使得無論在成分比上或經由計算出來的能隙都會與原本能隙彎曲的特性不一樣。另外，我們也發現ZnS1-xOx薄膜熱退火(RTA)後，比較靠近ZnO(0002)的成分在低溫狀態下做光激發螢光光譜(Photoluminescence,PL)量測會有發光的特性，進而比較在不同溫度底下能隙之變化。

關鍵字

脈衝雷射蒸鍍法 ； 合金 ； 氧硫化鋅

並列摘要

In this thesis, the pulsed laser depositiion growth and characterization of metastable ZnS1-xOx (0 < x < 1) alloy grown on a ZnO buffer layer on C-plane sapphire substrate were investigated. A ZnS target was laser ablated in an oxygen atmosphere to form the ZnSO film on the substrate.X-ray diffraction measurements revealed that the crystalline properties and the composition of the alloy strongly depend on the substrate temperature. Lower growth temperature favors higher incorporated oxygen content. The (0002) reflection peak shifts continuously from the ZnS value to the ZnO value by increasing the O2 partial pressure, indicating the alloy ZnS1-xOx of almost complete composition range was successfully synthesized.
The absorption coefficients retrieved from optical transmission measurements were used to determine the band gap energies. We find that the as-grown ZnSO films were unstable under the illumination of the UV light(form the xenon lamp)used in the transsmissiom measurements. The composition, crystallinity, and the interfase of the samples were very sensitive to the UV light.

並列關鍵字

pulsed laser deposition ； ZnSO

參考文獻

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