低成本且大面積之化學水浴法製備硫化鎘薄膜於太陽能光電應用研究

化學水浴沉積法(Chemical bath deposition)是一種常用來製備硫化鎘(CdS)薄膜的方法，通常應用於硒化銅銦鎵(Cu(In,Ga)Se2)薄膜太陽能電池的緩衝層(buffer layer)，但是目前的重要議題是要減少溶液的使用量，為了可以減少回收及處理的成本。本研究提出一個簡單的方法，利用加熱基板、淺溶液、搖晃攪拌，透過簡單的裝置設計，快速且方便的成長硫化鎘(CdS)半導體薄膜來達到這個目的，同時解決了均勻性，均相成核反應，及產率等問題。我們使用X光繞射儀(XRD)去研究薄膜的晶體結構，紫外光/可見光光譜儀(UV-VIS)去探討光學性質，場發射掃描式電子顯微鏡(FE-SEM)去觀察表面形貌與晶粒大小，利用電性的量測去分析光電流特性，以上諸多評價證實此技術具有高的產業應用價值。由本實驗裝置，經過適當的震盪攪拌(shaking)，會得到均勻性佳、產率高的硫化鎘薄膜，對製備硒化銅銦鎵(Cu(In,Ga)Se2)薄膜太陽能電池中緩衝層薄膜則有正面的意義。

關鍵字

化學水浴沉積法；半導體；硫化鎘薄膜；緩衝層

並列摘要

Chemical bath deposition, CBD, is a common method to prepare CdS films, which are often applied in the buffer layer of Cu(In,Ga)Se2 solar cells. The current issue of importance is to reduce the amount of solution, in order to reduce the cost of recycling and processing. In the study, a simple method is proposed. Through a simple equipment design, including the use of a hot plate, shallow solution, and oscillation, the reduction of solution is achieved. CdS films can be grown in a convenient and fast way, and at the same time the problems like homogeneity, homogeneous nucleation reaction and productivity can be solved. The physical properties of the films are evaluated by the following methods: XRD is used to investigate the crystal structure; UV-VIS to study the optical properties of the films; FE-SEM to observe the morphology and the grain size; electrical measurement to analyze its characteristics of photoelectric current. The above evaluations showed that the technique possesses a high commercial value. By applying oscillation during the process, a highly homogeneous CdS film with a high production rate can be obtained, which indicates a positive progress in the preparation of the buffer layer in Cu(In,Ga)Se2 thin film solar cells.

並列關鍵字

Chemical Bath Deposition ； semiconductor ； cadmium sulfide ； buffer layer

參考文獻

[1] G. L. Pearson and Conyers Herring, "Magneto-resistance effect and the band structure of single crystal silicon," Physica, 20(7-12), 1954, pp. 975-978.

[2] D. A. Cusano, "CdTe solar cells and photovoltaic heterojunctions in II-VI compounds," Solid-St.Electron, 6(3), 1963, pp. 217-218.

[3] L.L. Kazmerski and G.A. Sanborn, "CuInS2 thin-film homojunction solar-cells," Journal of Applied Physics, 48, 1997, pp. 3178-3180.

[4] H. W. Schock and Rommel Noufi, "CIGS-based Solar Cells for the Next Millennium," Progress in Photovoltaics: Research and Applications, 8(1), 2000, pp.151-160.

[6] Sigurd Wagner, J. L. Shay, P. Migliorato, and H. M. Kasper, "CuInSe2/CdS heterojunction photovoltaic detectors," Applied Physics Letters, 25(8), 1974, pp. 434-435.

國際替代計量

低成本且大面積之化學水浴法製備硫化鎘薄膜於太陽能光電應用研究

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