- 學位論文
脈衝雷射蒸鍍法成長 摻銻氧化鋅/氧化鋅 p-n接面之特性研究
Characterization of ZnO:Sb/ZnO p-n junctions grown by pulsed-laser deposition
摘要
本論文使用脈衝雷射蒸鍍法(pulsed-laser deposition)製程p型摻銻氧化鋅薄膜以及n型純氧化鋅薄膜來形成p-n接面。其中n型純氧化鋅薄膜沉積在(002)晶格取向的藍寶石基板上並在製程時通氧氣以減少氧空缺，p型摻銻氧化鋅薄膜在製程結束後通氮氣降溫以提高載子濃度。 在文中，我們此用了一種等效電路的方法，此方法經過市售二極體之驗證，證明可以袪除量測p-n接面的電流-電壓特性時所產生的蕭特基效應。此外，此樣品經由KeithLink 2400的電流-電壓量測後，得到純氧化鋅與摻銻氧化鋅薄膜的接面之間存在著電壓閥值為0.8伏特且反向漏電流為0.1微安培的整流特性。並且使用X光繞射儀分析可看出氧化鋅薄膜有良好的(002)晶格取向。霍爾量測指出經過通氮氣降溫的製程後電洞濃度可提高到1018。而使用穿透光譜量測接面時看出在可見光的波長範圍內，樣本的穿透率為60~80%。
並列摘要
In this study, Sb-doped ZnO films are used for the p-type sides and intrinsic ZnO films for the n-type sides of p-n junctions grown by pulsed-laser deposition. ZnO films have been deposited on (002) sapphire substrates in an ambient gas of oxygen to reduce oxygen vacancies. P-type ZnO:Sb films have been cooled in nitrogen ambient to raise the hole concentration. We found another procedure which can removal the schottky effect in p-type ZnO:Sb films during the current-to-voltage (I-V) measurement. And distinct rectifying I-V characteristics are observed for junctions between ZnO and p-type ZnO:Sb films , exhibiting a threshold voltage of 0.8 V and reverse-bias leakage current was 0.1 uA . The X-ray diffraction shows that ZnO films are highly orientated along the (002) direction. Hall measurement indicated that the hole concentration was raised into high order of 1018cm-3 after cooled procedure. The optical transmission of the p–n junction sample was 60~80% in the visible region.