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  • 學位論文

以非平衡磁控濺鍍氮化鈦/氮化鉻奈米多層膜微結構及其特性之研究

Investigation of the microstructure and characterizations of TiN/CrN nano- multilayer deposited by unbalanced magnetron sputter process

指導教授 : 蘇程裕
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摘要


本研究係利用直流式磁控濺鍍沈積法,以不同堆疊週期作氮化鈦及氮化鉻交互堆疊沈積奈米多層膜於碳化鎢基材,並分別探討氮化鈦/氮化鉻奈米多層膜形貌、晶體結構、機械性質、熱穩定性及高溫抗氧化性能。 本研究共分為兩階段。第一階段先考慮不同氮氣流量(20-30 sccm)為製程參數沈積氮化鈦及氮化鉻單層膜,以SEM觀察其膜層形貌與X光繞射分析作薄膜相鑑定及晶體結構分析。研究結果發現製程中加以基板偏壓-100V能有效抑制薄膜柱狀晶成長及多孔隙等缺陷。製程中氮氣流量由20 sccm增加到30 sccm,氮化鈦皆為面心立方晶系之TiN結構,而氮化鉻則是由六方晶系結構的β-Cr2N轉變面心立方晶系之CrN結構。第二階段是利用氮氣流量30 sccm鍍製堆疊週期Λ分別為為25 nm及4 nm之氮化鈦/氮化鉻奈米多層膜。由X光繞射分析中發現當堆疊週期Λ降至4 nm時,其薄膜主要特性峰皆會偏移至兩氮化物的平均位置。由刮痕試驗結果得知多層膜堆疊週期達4 nm時,臨界荷重達45.1 N。高溫抗氧化測試中,利用XRD分析奈米多層膜,結果顯示當溫度上升至1000 ℃後才發現有氧化物生成。硬度試驗中得知奈米多層膜硬度值可達34.9 GPa,且於1000 ℃才發現薄膜有劣化剝離基板的現象。

並列摘要


In this study, TiN/CrN nano-scale multilayers with bilayer period Λ were deposited on a WC substrate by DC magnetron sputter process. Also the microstructure, mechanical properties, thermal stability and oxidation resistance of the films were characterized. Two stages were included in this study, the first stage is to deposit TiN and CrN monolayers with the different nitrogen flow rate (20-30 sccm), the morphology, and crystalline structures were characterized by SEM and XRD. The results show that the growth of column grains and void defects could be restrained at the substrate bias(-100 V). When nitrogen flow rate is increased from 20 to 30 sccm, TiN structure is still maintained. However, β-Cr2N structure changes to CrN structure measured by XRD. The second stage is to deposit TiN/CrN multilayers with bilayer period Λ 25 nm and 4 nm. The XRD measurements show that the characteristic peak of the as-deposited thin films with bilayer period Λ 4 nm would be shifted between the two nitrides. The scratch tests results show that the critical load is 45.1 N for thin films with 4 nm period. Oxidation resistance test also reveal that oxidation is observed at the temperature up to 1000 ℃ identified by XRD. The hardness is enhanced to 34.9 GPa and the temperature for thin films peeling from substrates is at 1000 ℃.

參考文獻


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