由於Cu電極在空氣中非常容易被氧化且與陶瓷體產生不良的界面效果,所以須將氧分壓控制在10-5 atm以上進行燒製。陶瓷材與銅膏在均勻混合與燒製後以XRD分析得知兩者無產生相互反應,S銅膏端電極在燒附溫度900℃時具有最佳的拉伸強度約1.1 MPa、電容值為0.99 μF與介電損失為0.013,而N銅膏端電極亦在900℃時具有最佳的拉伸強度約 1.7 MPa、電容為0.99 μF與介電損失為0.013,並且兩種銅膏在900℃時表面具有最佳緻密性。 本研究結果,燒附溫度過低或持溫時間不足,皆會產生銅端電極燒結不完全,造成銅端電極機械強度不足、介電損耗增加與電容變化率不穩定;而當燒附溫度過高或是持溫時間過長時,雖然會增加其附著強度,但也會造成其介電損耗增加與電容變化率不穩定;另外透過Raman分析可以觀察出,當鈦酸鋇使用不同的氧分壓條件進行燒結後,其產生的氧空缺之影響可簡易的經由Raman分析得知。
Cu is easy to be oxidized in the air and has a poor adhesion to the ceramic subistiate. Thue, it is necessary to control the partial pressure of oxygen above 10-5 atm during the cofiring process. There is no obseiuable neactions between ceramic material and Cu-paste often cofiring, according to the XRD analysis. The best tensile strength is 1.1 MPa with capacitance of 0.99 μF and dielectric loss of 013 for the S Cu-paste end termination cofiring at 900℃. On the other hand, the best tensile strength is 1.7MPa with capacitance of 0.99 and μF and dielectric lost of 013 fn the N end termination cofiring at 900℃. Meanwhile, at 900℃, the both kinds of Cu-pastes are with the best density. In the research, when the fir temperature is over low or retention time is not enough, it will bring the uncompleted of Cu end termination in sinter to cause the insufficient mechanical strength, the dielectric loss increased and the unstable TCC; Although it will increase the strength of adhesion while fire temperature is over high or retention time is too long. Due to the surface or interface of the internal, external will separate out the glass. It will cause the dielectric loss increased and the TCC unstable. In the end, thru the Raman spectrum can be known, it will be easy to learn the oxygen vacancy influence by Raman analysis when BT is sintering in different procedures.