本實驗利用寬能隙半導體SnO2之特點應用於染料敏化太陽能電池之研究,分別利用化學溶液法與固態合成法製備不同SnO2/ZnO比例之複合薄膜,並應用於染料敏化太陽能電池(DSSC)之工作電極,探討SnO2與ZnO復合的比例對光電轉化效率之影響。 藉由ZnO能階導帶高於SnO2能階導帶之特點,使其形成階梯式能階,以減少電子與電洞對再結合,因此將不同實驗方法所製備的不同SnO2/ZnO比例之之工作電極,分別利用電子顯微鏡(SEM)觀察顯微結構、XRD分析繞射結晶向;量測光電轉換效率分析(I-V curve)可以得到電池的短路電流、開路電壓、光電轉換效率等;入射單色光子-電子轉換效率(IPCE)可以量測電池元件在不同波長下的光電轉換效率,由實驗結果得知使用化學溶液法,當氧化鋅的重量百分比75 wt.%時,光電轉換效率可提高至3.57%,開路電壓為0.73 V,電流密度值為8.15 mA/cm2。使用固態合成法製備,當氧化鋅重量百分比為25 wt.%時,其光電轉效率1.85%,開路電壓為0.75 V,電流密度值為4.17 mA/cm2。
This study investigates characteristics of wide bandgap semiconductor of SnO2 on the working electrode in a dye-sensitized solar cell (DSSC), using chemical solution and solid-state synthesis method to prepare SnO2/ZnO film. The purpose of this study is investigate photo-electrochemical parameters of the films and using different mixing ratio of SnO2/ZnO. To reduce the recombination of electronic and electric by using the relationship of ZnO conduction band is higher than SnO2 conduction band, the different mixing ratio of SnO2/ZnO film was using a FE-SEM (Field Emission Scanning Electron Mictoscope) to observe the microstructure, XRD (X-Ray Diffraction) analysis diffracted crystalline, and the photoelectric conversion efficiency by IPCE (Incident Monochromatic Photon-to-Electron Conversion Efficiency). Using chemical solutions method was prepared SnO2/ZnO film, When 25 wt% of ZnO was added, conversion efficiency will enhance to 3.57%, an open circuit voltage of 0.73 V, a short circuit current of 8.15 mA/cm2. Then, use of solid-state synthesis method was prepared SnO2/ZnO film. When 25 wt% of ZnO was added, conversion efficiency will enhance to 1.85%, an open circuit voltage of 0.75 V, a short circuit current of 4.17 mA/cm2.