以射頻磁控濺鍍法製備Zn1−xMgxO薄膜與其光電特性研究

The Electrical and Optical Properties of Zn1−xMgxO Film Prepared by Radio Frequency Magnetron Sputtering

吳龢勳(He-Shin Wu)

指導教授 ： 王錫福

國立臺北科技大學/工程學院/材料科學與工程研究所/碩士(2014年)

摘要

本研究於改變基板溫度下，以射頻磁控濺鍍300 nm厚之 Zn0.86Mg0.10Al0.04O薄膜於Eagle 2000康寧玻璃基板上。研究發現，當基板溫度從100oC增加至300 oC時，電阻率會由5.12 x 10-2 Ω-cm降低至4.19 x 10-2 Ω-cm。霍爾效應的量測結果顯示，在100 oC ~ 300 oC的基板溫度範圍，載子濃度會隨著基板溫度之升高而增加。此外本研究也藉由固定基板溫度改變退火溫度來提升Zn0.86Mg0.10Al0.04O薄膜的導電性質。當退火溫度增加至200 oC時，電阻率下降至8.41 × 10-3 Ω-cm，分別持續提高退火溫度至400 oC與500 oC時，雖然電阻率可大幅降低至7.85 × 10-3和7.78 × 10-3 Ω-cm。但當退火溫度增加至600 oC時，因為載子遷移率下降及薄膜能隙較高使得Zn0.86Mg0.10Al0.04O薄膜電阻率增加。

關鍵字

Zn0.86Mg0.10Al0.04O薄膜 ； RF磁控濺鍍 ； 基板溫度 ； 退火溫度

並列摘要

The Zn0.86Mg0.10Al0.04O films with 300 nm thickness were deposited onto Corning Eagle 2000 glass substrates by sputtering Zn0.82Mg0.14Al0.04O target using rf magnetron sputtering with various substrate temperature. The electric resistivity (ρ) of Zn0.86Mg0.10Al0.04O films continuously decreases from 5.12 x 10-2 Ω-cm to 4.19 x 10-2 Ω-cm as the substrate temperature is increased from 100oC to 300 oC. Hall measurement for the Zn0.86Mg0.10Al0.04O films sputtered in various substrate temperature. It shows that the carrier concentration are increases as the substrate temperature is increased from 100oC to 300oC, In this study, the electrical resistivity of Zn0.86Mg0.10Al0.04O films also reduced by various annealing temperature at substrate temperature of 300 oC. The ρ value could be reduced to 8.41 x 10-3 Ω-cm as annealing temperature of 200 oC. Further increasing annealing temperature to 400 oC and 500 oC respectively, the electric resistivity of Zn0.86Mg0.10Al0.04O films are further decreased to 7.85 x 10-3, and 7.78 x 10-3 Ω-cm. However, as the annealing temperature was increased to 600 oC, the electric resistivity of Zn0.86Mg0.10Al0.04O film is increased because the mobility is decreased and higher band gap.

並列關鍵字

Zn0.86Mg0.10Al0.04O films ； RF magnetron sputtering ； substrate temperature ； annealing temperature

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