單一氮化銦奈米線之分子敏化光電導特性

本文所探討之一維奈米結構氮化銦奈米線之光電導和電傳導行為，氮化銦奈米線由有機金屬化學氣相沉積所成長出，以銅網作為遮罩並鍍上鈦/金作為電極，再以聚焦離子束鍍上白金以將其奈米線與電極相接，製作出可用於量測之單根奈米線元件。在變溫下的暗電導電性量測中，可得知氮化銦奈米線呈現出和以往不同的半導體特性。且在808 nm雷射照射中，氮化銦奈米線呈現出載子具有較長的生命週期。根據在不同環境下之光電導和暗電導電性量測結果顯示出，暗電流及光電流在真空下同時可被增進相對於大氣的環境下，結果顯示出藉由氧分子吸附會抓取奈米線表面電子形成氧離子，而形成一個表面狀態，進而影響了光電流和暗電流。

關鍵字

氮化銦；奈米線；有機金屬化學氣相沉積

並列摘要

In this study, the electronic transport and photoconductivity of single indium nitride (InN) nanowires have been investigated. The monocrystalline InN nanowires have been successfully synthesized by metalorganic chemical vapor deposition (MOCVD). Single InN nanowire devices with focused-ion-beam-deposited (FIB) Pt contacts have been fabricated for the dark- and photo- conductivities studies. Temperature-dependent resistivity measurement shows the weak semiconducting rather than metallic behavior of the as-grown InN nanowires. Under the 808 nm excitation, the single InN nanowires reveal a long lifetime mechanism of carrier. It is found that both the dark- and photo- currents are enhanced in vacuum compared to that in air. This result indicated that physisorbed oxygen molecules could create charge surface state as electron trap on this nitride nanowire.

並列關鍵字

InN ； Nanowire ； MOCVD

參考文獻

[1] A. G. Bhuiyan, A. Hashimoto and A. Yamamoto, “Indium nitride (InN): A review on growth, characterization, and properties,” Journal of Applied Physics, vol. 94, no. 5,2003, pp. 2779.

[3] S. K. O’Leary, B. E. Foutz, M. S. Shur, U. V. Bhapkar, and L. F. Eastman, “Electron transport in wurtzite indium nitride,” Journal Applied Pysics, Vol. 83, 1998, pp.826 .

O. Semchinova, and J. Graul, Phys. Status Solidi B 229, R1, 2005.

[5] C. S. Gallinat, G. Koblmüller, J. S. Brown, S. Bernardis, and J. S. Speck, “In-polar InN grown by plasma-assisted molecular beam epitaxy,” Applied Physics Letters, vol. 89, 2006, pp. 032109.

[8] V. M. Polyakov and F. Schwierz, “Low-field electron mobility in wurtzite InN,”

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單一氮化銦奈米線之分子敏化光電導特性

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