本實驗係利用超音波噴霧熱解法製作摻雜錳之氧化鋅薄膜,研究其特性和成長溫度之關係。可得最佳成長溫度為500℃時為佳。 調配含有待成長化合物之元素的水溶液(Zn(CH3COO)2+MnCl2+H2O),以超音波震盪造成溶液分子吸附在載流氣體上通入高溫爐內,在玻璃基板表面上成長氧化鋅薄膜。將樣品以X光繞射儀(X-ray Diffractometer)、光激發螢光光譜(Photoluminescence)、拉曼光譜(Raman Spectrum)、穿透光譜(Transmittance Spectrum)、掃描式電子顯微鏡(Scanning Electron Microscope)、能量散佈光譜儀(Energy Dispersive Spectrometer)、原子力顯微鏡(Atomic Force Microscope),分析樣品的晶格常數、能隙、穿透率、表面型態、元素含量、粗糙度。 在相同濃度下,X光繞射光譜可得成長溫度增加時,薄膜往多晶方向成長。並藉由能量散射光譜找出成長溫度與摻雜濃度的關係。拉曼光譜可知不同溫度下成長摻雜錳之氧化鋅薄膜其非彈性散射特性隨溫度增加而增強,而本徵E2 mode減弱。AFM分析薄膜表面粗糙度可得知溫度越低和成長時間越長,表面易生成團簇。穿透光譜可得到樣品對不同波長穿透率及吸收率以求得能隙。由光致螢光光譜可得到摻雜濃度與能隙、激發光強度的關係。 最後在光致螢光光譜及穿透光譜上,對樣品施加一磁通量,研究樣品在磁場下對光特性的影響。
In this thesis, we manufacture the ZnO thin film by ultrasonic spray pyrosis method, and compare the relation between characteristics and growth temperature. Thus, according to this research, we obtain the optimal growth temperature which is 450℃. We allocate aqueous solutions (Zn(CH3COO)2+MnCl2+H2O) that includes growth compounds, use ultrasonic oscillation that results in vapor molecules adsorbing carrier gas through a furnace, and grow the ZnO thin film on a glass substrate. Next, the sample is examined by X-ray Diffractometer (XRD), Photoluminescence (PL), Raman Spectrum, Transmittance Spectrum, Scanning Electron Microscope (SEM), Energy Dispersive Spectrometer (EDS), Atomic Force Microscope (AFM). In addition, we also investigate the lattice constant, the energy gap, transmittance, the surface, element composition, and roughness of the sample. Under the same concentration, XRD is obtained when the growth temperature is enhanced. and EDS to find out the relationship between growth temperature and doping concentration. Besides, the thin film grows toward the direction of poly-crystal. Raman Spectrum we know that inelastic scattering of the growth Mn-doped ZnO is enhanced corresponding to different temperature. However, the E2 mode is decreased. It is known that it is much easier to form clusters on the surface in lower temperature and longer growth time due to the AFM analysis of thin film roughness. Transmittance through the sample corresponding to different wavelength absorption, and thus energy gap is achieved. We obtain the relation of doping concentration, energy gap, and luminescence intensity. Finally, the sample is exerted by magnetic flux for the variation of optical characteristics measurements in PL and Transmittance.