利用化學水浴法製備Ag2S/In2S3可見光光觸媒薄膜與其性質分析

Photoelectrochemical properties of polycrystalline Ag2S/In2S3thin film electrodes prepared by chemical bath deposition

曾建順(Jian-Shun Tseng)

指導教授 ： 張裕煦

國立臺北科技大學/工程學院/資源工程研究所/碩士(2008年)

https://doi.org/10.6841/NTUT.2008.00423

摘要

本研究以化學水浴沉積法(Chemical Bath Deposition)製備AgInS2光觸媒薄膜，所選擇光觸媒材料為Ag2S/In2S3半導體光觸媒。探討兩階段方式成長不同薄膜厚度對薄膜成長之影響，經反應溶液調配使金屬離子(Ag+, In3+)與硫離子(S2-)相互反應沉積於ITO導電玻璃上。首先，先將Ag2S沉積於ITO基材上，採用一固定之層數，隨後再將不同厚度之In2S3薄膜沉積覆蓋上去。由於In2S3薄膜厚度的不同，可期望於真空環境下退火後成長出不同比例之Ag2S/In2S3半導體光觸媒薄膜，並予以量測光電性質，晶型結構等來鑑定所成長之薄膜。晶型結構鑑定部份使用X-ray繞射來鑑定，光電性質部份則使用0.35 M Na2S+0.25 M K2SO3電解質溶液並於100 mW氙燈模擬太陽光照射(AM1.5)下測定其光電流值。之後調整參數部份以化學水浴法可能影響鍍膜之參數，尋找鍍液配方與操作條件。

關鍵字

化學水浴法 ； Ag2S ； In2S3 ； 光電化學 ； 光觸媒

並列摘要

In this study, Ag2S/In2S3 films were deposited on indium tin oxide coated glass (ITO) substrates by chemical bath deposition (CBD). Silver nitrate, indium nitrate, ammonia nitrate, triethanolamine and thioacetamide were used as the sources of Ag+, In3+, buffer solution, complex agent and S2-, respectively. The films were prepared by two-step method. Firstly Ag2S thin film was deposited on ITO substrate and covered with In2S3 film the following step. After annealing, the crystallinity of the films turned to AgIn5S8 or AgInS2 due to the different thickness of In2S3 involved. The crystal structures of the thin films were identified by the powder X-ray diffraction and the photocurrents were measured in 0.35 M Na2S + 0.25 M K2SO3 electrolyte solution under illumination of 100 mW Xe lamp with a solar simulator (AM 1.5).

並列關鍵字

Chemical bath deposition ； Photocatalysis ； Silver Sulfur ； Indium Sulfur, thin film.

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