- 學位論文
射頻磁控濺鍍製備CuAlO2透明導電薄膜之特性
The Properties of CuAlO2 Transparent Conductive Film Prepared by Radio Frequency Magnetron Sputter
摘要
本研究是探討濺鍍溫度、濺鍍功率與氣體流量比率等製程參數，在射頻磁控濺鍍製備p型CuAlO2薄膜時對薄膜之影響。本實驗改變之製程參數如濺鍍溫度(100oC ~ 400oC)，濺鍍功率(50 W ~ 200 W)，及氣體流量O2/ (Ar + O2)比率(0% ~ 100%)，經XRD分析出不同製程參數製備之薄膜均呈現非晶結構。經由各項檢測後，得知最佳製程參數在濺鍍溫度400oC，濺鍍功率150 W，氣體流量O2/ (Ar + O2)比率20%，並於N2氣氛下以800oC快速退火一小時，此時透光率只達36.75%，片電阻值最低可到1.25×105 Ω/□，且其載子濃度可達4.08 × 1018 cm-3且為正值，遷移率則為1.74 cm2/ s•V，而電阻率最低為0.882 Ω•cm。雖然膜層有不錯的電性，但仍無法達到良好透光率的要求，因此必須再以此濺鍍條件加以改良，以期望能做出良好的透明導電薄膜。
並列摘要
P-type transparent conducting thin films of copper aluminate were prepared by radio frequency magnetron sputter of a commercial CuAlO2 target which purity is 99.95%. Films of CuAlO2 were deposited on Eagle glass substrates. The sputtering was performed in difference process parameters, such as O2 / (Ar + O2) ratio (0% ~ 100%) atmosphere, the substrate temperature (100oC~400oC), and the sputtering power ( 50 W~ 200 W). X-ray diffraction (XRD) spectra of the films showed the peaks which could be assigned with those of the non-crystalline CuAlO2. UV–Visible spectrophotometric measurement showed low transparency of the films in the visible region. The best process parameters were O2 / (Ar + O2) ratio of 20%, the substrate temperature of 400oC, the sputtering power of 150 W, and then rapid thermal annealing of temperature to 800oC in one hour under N2 atmosphere. Direct band gaps were found to exist and corresponding estimated values was 2.69 eV. The room temperature resistivity of the film was fairly low and 0.882 Ω•cm. Room temperature Hall effect measurement also indicated positive value of carrier concentration and Hall mobility, and their values were 4.08 × 1018 cm-3 and 1.74 cm2 / s•V, respectively.