具有銀反射層之矽薄膜太陽能電池特性之研究

Study of the Properties Based on Silicon Thin Film Solar Cell Thin Silver Reflective Layer

李彥伯(Yen-Po Lee)

指導教授 ： 陳隆建

國立臺北科技大學/電資學院/光電工程系 光電與能源產業研發碩士專班/碩士(2011年)

https://doi.org/10.6841/NTUT.2011.00578

摘要

本研究主要目的是探討在非晶矽p-i-n 太陽能電池製作銀反射層電極的光電特性研究。首先是利用電漿輔助化學氣相沉積系統(plasma-enhanced chemical vapor deposition, PECVD)製備所要的非晶矽氫薄膜(a-Si:H)材料；首先在矽基板上成長一層a-Si:H緩衝層，再沉積p-type a-Si:H薄膜，接著使用氫電漿處理a-Si:H緩衝層後，再沉積a-Si:H薄膜，用氫氣稀釋源氣體SiH4的方式沉積n-type a-SiC:H薄膜，然後在n-type a-SiC:H薄膜上利用射頻磁控濺渡系統(Radio-Frequency magnetron sputtering system)濺鍍AZO，用黃光技術作上銀電極，完成具有銀反射層的p-i-n太陽能電池。最後用太陽光模擬光源AM 1.5，強度為100 mW/cm2照射在未加上銀電極的p-i-n太陽能電池，測量得到短路電流為3.423 mA/cm2、開路電壓Voc為 630mV、填充因子FF=0.255及能量轉換效率為5.5%。加上銀電極的p-i-n太陽能電池在相同的量測條件下，量測得到短路電流3.86 mA/cm2、開路電壓Voc為 630mV、填充因子FF=0.255及能量轉換效率為6.21%。這研究顯示加上銀電極後之太陽能電池短路電流提升12.7%，能量轉換效率提升12.9%。

關鍵字

奈米晶粒矽 ； 緩衝層

並列摘要

The main purpose of this study was to investigate the amorphous silicon p-i-n solar cell production in the silver reflective layer of optical and electrical properties of electrodes.. First is to utilize the power coupled plasma chemical vapor deposition system (plasma-enhanced chemical vapor deposition, PECVD) amorphous silicon hydrogen to be prepared film (a-Si: H) materials; first grown on Si substrate layer a-Si: H buffer layer , and then deposited p-type a-Si: H film, then use the hydrogen plasma treatment a-Si: H buffer layer, and then deposited a-Si: H films by hydrogen dilution of source gases SiH4 way deposition n-type a -SiC: H films, and then in n-type a-SiC: H films by RF magnetron sputtering system (Radio-Frequency magnetron sputtering system) sputtered AZO, with yellow for the silver electrode technology, complete with silver reflective layer of pin solar cells. T Finally, simulated sunlight light AM 1.5 illumination condition with a solar intensity of 100 mW/cm2 without silver electrodes get the short-circuit current density Jsc = 2.614 mA/cm2, the open-circuit voltage Voc = 630mV, the fill factor FF = 0.255, and the power conversion efficiencies η = 4.2%.；with silver electrodes get the short-circuit current density Jsc = 3.86 mA/cm2, the open-circuit voltage Voc = 630mV, the fill factor FF = 0.255, and the power conversion efficiencies η = 6.21%. Study Showing with silver electrode of solar cells ，the short-circuit current the increase of 12.7%, 12.9% energy conversion efficiency

並列關鍵字

n-Si:H ； buffer layer

參考文獻

[1] 周育正,”使用Ag金屬粒子輔助式蝕刻技術製作具有微米孔洞結構砷化鎵混合型光伏元件之研究”,碩士班論文,國立台北科技大學光電工程研究所,2010.

[3] S. M. Sze., Semicondutor Devices: Physisc and Technology,New York: Wiley,1981.

[5] Alessandro Fantoni,Manuela Viera,Rodrigo Martins,”Influence of the intrinsic layer characteristics on a-Si:H p-i-n solar cell performance analysed by means of a computer simulation”,Solar Energy Materials & Solar Cells,73,p151-162.(2002)

[6] Hong Xiao, Introduction to Semiconductor Manufacturing Technology,Prentice-Hall, Inc.(2000).

[8] Techniques for the sputtering of optimum indium-tin oxide films on to room-temperature substrates, N. Danson, I. Safi, Surface and Coatings Technology 99 (1998), p.p.147-160.