氧化鋅薄膜之製備與特性分析

Fabrication and Characterization of Zinc Oxide Thin Films

蔡忠育(Chung-Yun Tsai)

指導教授 ： 蘇春熺

國立臺北科技大學/機電學院/製造科技研究所/碩士(2009年)

https://doi.org/10.6841/NTUT.2009.00521

摘要

本研究內容大致可分成兩階段，第一階段利用溶膠-凝膠製備製備出奈米氧化鋅顆粒，製備後之粉體經XRD，SAED檢測證實所製出氧化粉末是具有六方纖鋅結構，並將粉體旋鍍於Si基材上燒結，可發現製備之奈米氧化鋅約900℃即可達到完成燒結。且當添加4ml NaOH所製備下的奈米氧化鋅粉體所需之活化能最低，其活化能約為113.66 KJ/mol。經FTIR檢測其粉末發現可藉由退火改善其結晶性，本研究中所製備的奈米氧化鋅峰值是呈現單峰狀態，而微米氧化鋅是呈現雙峰現氧化鋅峰值是呈現雙峰狀態此乃因為粉末形貌影響此結果。由UV/VIS光譜可證實NaOH的添加量，確實會影響其紫外光吸收波段，且隨NaOH的增加，製備之粉末吸收波長會往長波長方向移動，故間接證實三種製程下之粉末存再差異,而這是因為粉末顆粒大小所影響。
第二階段則是製備氧化鋅薄膜，探討退火對於薄膜的影響，經XRD與Raman光譜分析薄膜可以發現退火可以改善氧化鋅薄膜薄膜之結晶性，但是卻會隨退火溫度的提高其張應力有其增加的趨勢，歸咎其原因乃是因為退火過程氧空缺所致，而氧空缺經由拉曼光譜(Raman)證實有其增加之趨勢。由於氧空缺又會影響其電性，經電性分析發現隨著退火溫度的提高其電阻率會隨之下降，並透過UV光照射氧化鋅薄膜亦發現隨著照射時間的增加其薄膜之接觸角由疏水性轉至親水性，且UV光照射氧化鋅旋鍍於ITO薄膜上之接觸角及其UV/VIS之吸收光譜強度之結果均指出氧化鋅旋鍍於ITO薄膜上對於UV光的效應都較為顯著，因此推論UV光對於薄膜之電容與紫外光吸收光譜結果是呈現正向關係。

關鍵字

奈米顆粒 ； 活化能 ； 氧空缺 ； 紫外光(UV) ； 接觸角

並列摘要

The contents of this study were roughly divided into two stages. In the first stage,
ZnO nanoparticles were prepared by the sol-gel method. After prepared, oxide
powders, which were examined by XRD and SAED analyses, were proved to possess
a hexagonal wurtzite ZnO structure. In addition, when ZnO nanoparticles were sintered at different temperature on a silicon wafer by spin coating, ZnO nanoparticles could achieve sintered densification at about 900 ℃. The prepared Zinc oxide
nanoparticles required the minimum activation energy when added 4ml NaOH. And the activation energy of grain of ZnO powders was 113.66 KJ/mol. The crystal quality of powders was improved by annealing. In this paper, the peak of ZnO nanoparticles was single. However, the peak of micro zno powders was double due to their surface shapes. UV / VIS spectroscopy could confirm that the increased amount of NaOH would influence the UV absorption band. Moreover, with the increase of NaOH, the wavelength of ZnO nanoparticles UV absorption band would move to the long wavelength. The result indirectly confirmed that three types of powders were different due to the sizes of particles.
The second stage was about preparaed zinc oxide thin films, discussing the influence of annealing temperature on them. By XRD and Raman spectroscopy analyses, the crystal quality of films was found to be improved because of annealing, but their tensile stresses rose with the increases of annealing temperature due to the oxygen vacancy, which was confirmed by the Raman spectroscopyhas. As Oxygen vacancies would affect the electrical properties, the resistivity decreases with the increases of annealing temperature. When ZnO thin films were irradiated by UV light, with the increase of exposure time, the zno contact angle turned from hydrophobic to hydrophilic interaction. In addition, the contact angle and UV / VIS absorption spectra of the intensity showed that the effects of spin-coating zinc oxide on ITO glass on UV light were more significant. Therefore, the UV light for the result of the zinc oxide thin film capacitors and ultra-violet absorption spectrum was inferred to be a positive relationship.

並列關鍵字

nanoparticles ； activation energy ； Oxygen vacancies ； UV light ； Contact angle

參考文獻

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