- 學位論文
以磁控濺鍍法製備p型類鑽碳薄膜之研究
Characterization of boron-doped diamond-like carbon prepared by R.F. Sputtering
摘要
本研究中成功利用射頻磁控濺鍍法於製備出p型含硼類鑽碳薄膜，此論文將討論以磁控濺鍍法可替代其餘繁雜的沉積製程及硼摻雜源。濺鍍所使用之靶材是將硼粉以單軸成型壓製成錠片，在置入於石墨靶材中。而使用之基板為未摻雜矽晶圓，使用霍爾效應量測得知為n型半導體。當類鑽碳薄膜中含有元素硼大於5.91 at.%以上，經由退火熱處理500 ℃後，其半導體特性將由n型轉變為p型。硼摻雜類鑽碳 (B-DLC)薄膜之硼碳面積比為0.7~20.4%時，載子濃度與載子遷移率以霍爾效應分析，其載子濃度範圍於8.5×1015~1.2×1019 cm-3，而載子遷移率為0.4~125.0 cm2/V•s，且電阻率為0.2~14.1 Ω-cm。由XPS光譜及拉曼光譜結果得知，類鑽碳薄膜中之硼原子將於退火熱處理期間發生熱活化行為，與碳原子形成鍵結，且類鑽碳薄膜中摻雜硼元素將使sp3鍵結比例下降，促進碳原子形成sp2鍵結而產生石墨化現象。
並列摘要
In this study, boron-doped diamond-like carbon (B-DLC) films with p-type conduction were successfully prepared by a R.F. magnetron sputtering method, instead of complicate deposition processes and boron sources reported in the literature. The sputtering targets used were composed of boron pellets buried in a graphite disc. The undoped DLC films prepared behaved as n-type conduction, based on the Hall-effect measurement. For boron content greater than 2.51%, the films showed semiconductor behavior converted from n-type to p-type conduction after annealing at 450 ℃. B-DLC films with area ratio of boron in target of 0.7~20.4% showed a carrier concentration of 8.5×1015~1.2×1019 cm-3, a mobility of 0.4~125.0 cm2/V•s, and an electrical resistivity of 0.2~14.1 Ω-cm. From the results of XPS spectra and Raman spectra, they indicated that motion of boron atoms was thermally activated during post-annealing, which promoted the formation of C-B bonds in the films. Also, the doping of boron in DLC films decreased sp3 bonding and facilitated carbon atoms to form sp2 bonding and graphitization.