18吋晶圓傳送盒迫淨方式比較

A comparative study on the purge methods for 450 mm wafer FOUPs

黃哲宇(ZHE-YU HUANG)

指導教授 ： 胡石政

國立臺北科技大學/機電學院/能源與冷凍空調工程系碩士班/碩士(2014年)

摘要

晶圓傳送盒FOUP (Front Opening Unified Pod)，為半導體製程間輸送及儲存的重要載具設備，未來隨著晶圓製程線徑尺寸於將縮至20奈米，晶圓製程直徑由12寸邁向18吋大小，如此大幅度的變動，代表著現有的迫淨方式已不適用於次世代的製程，如何有效地維持18吋晶圓傳送盒內部潔淨度，即為本研究最重要的課題。
本研究以全尺寸實驗進行18吋晶圓傳送盒(FOUP)之迫淨充填模式分析，根據現有晶圓廠使用的系統架構，配合新型態的迫淨方式可以將充填模式分為3種：1.一般充填(無導流管)2.導流管充填3.真空充填(無導流管)方式進行汙染物移除效率分析。本研究主要探討：1.利用潔淨壓縮乾空氣對18吋晶圓傳送盒進行迫淨時，內部水蒸汽的移除情形；2.利用真空系統輔助潔淨壓縮乾空氣對18吋晶圓傳送盒進行迫淨時，內部水蒸汽的移除情形，並討論真空充填系統與傳統充填系統耗能比較。

關鍵字

晶圓傳送盒(FOUP) ； 導流管 ； 18吋晶圓傳送盒 ； 真空系統 ； 充填系統 ； 氧氣與溼氣移除

並列摘要

For 450mm wafer FOUPs, purge nitrogen or clean dry air (CDA) becomes a must during the wafers in transportation or storage. However, the performance of continuous purging of nitrogen or CDA must be improved in terms of efficiency, cost and gas volume. In this study, the time-depletion of moisture and oxygen during purging process by three different purge methods including traditional 2 inlets/2 outlets (method 1) , purge with diffusers (method 2), and combine vacuumed and purge (method 3) are compared and discussed. Significant improvement of purge performance is presented.

並列關鍵字

Front Opening Unified Pod(FOUP) ； 450mmFOUP ； oxygen and moisture removed ； vacuum systems ； purge

參考文獻

[3] international Technology Roadmap for Semiconductors (ITRS), 2013 Edition, http://www.itrs.net/Links/2012ITRS/Home2012.htm

[5] Tokunaga, K. Koiwa, A. ; Suzuki, N. ; Takeda, K. ; Makabe, K. ; Nishihara, S. ; Koike, A. “FOUP mini-environment contamination control optimizing nitrogen purging,”

[7] Chun-Yong Khoo, Shih-Cheng Hu*, Che-Yu Huang,Cheng-Wei Yang “Purging of Foup For 450 mm Wafer Manufacturing ” Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI P 171 – 173 ISSN : 1078-8743 (2013)

[8] J. Frickinger, J. Bugler, G. Zielonka, L. Pfitzner, H. Ryssel, S. Hollemann, H. Schneider “Reducing airborne molecular contamination by efficient purging of FOUPs for 300-mm wafers-the influence of materials properties”IEEE Transactions on Semiconductor Manufacturing (Impact Factor: 0.86). 12/2000; DOI:10.1109/66.892628 (2000)

[9] Shih-Cheng Hu , Jhy-Ming Tsao”Purging of front opening unified pod with nitrogen for 300 mm wafer manufacturing,” Japanese Journal of Applied Physics, 45(6A):5269-5271 (2006).