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  • 學位論文

利用斜向沉積技術製鍍奈米銀直柱陣列應用於表面增強拉曼光譜

Using glancing angle deposition technique to fabricate silver-pillar arrays for Surface-enhanced Raman Scattering (SERS) spectra

指導教授 : 任貽均
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摘要


近年來,表面增強拉散射技術應用於化學物與生物分子之檢測,而表面增強拉曼散射可藉由控制奈米結構的大小與形狀進行改善。因此,本研究利用斜向沉積技術,在蒸鍍過程中以基板的法線為軸重複旋轉,同時鍍在玻璃基板與矽晶圓上形成奈米銀直柱陣列的薄膜。鍍製不同厚度的奈米銀直柱陣列(202nm~321nm)與不同厚度的奈米銀斜向陣列(285nm~335nm),研究與分析其穿透率、反射率與表面增強拉曼散射(SERS)等光學特性。 奈米銀直柱陣列應用於表面增強拉曼光譜之染料分子探測,點滴溶液於基板上之羅丹明6G (R6G)分子藉由532nm激發波長量測到分子訊號,且隨著奈米銀直柱陣列之厚度增長,偵測得拉曼光譜訊號也隨之增強。另外,同樣的量測條件下比較奈米銀直柱陣列與奈米銀斜柱陣列,發現前者具有較強的拉曼訊號。 為了瞭解SERS訊號的產生,利用有限時域差分法(FDTD)進行模擬與分析奈米銀直柱陣列內的電場增強情形,並且觀察最強的區域性電場共振(hot spots)發生。由奈米銀直柱陣列結構當作SERS基板可以量測得R6G分子在10-8莫耳濃度下之拉曼光譜訊號。

並列摘要


In recent years, Surface-enhanced Raman Scattering (SERS) technique was applied to chemical and biomolecule detection. And SERS can be improved by controlling the size and shape of nanostructure. Therefore, thin films comprising silver-pillar arrays were fabricated on glass and Si-wafer by physical vapor deposition (PVD) technique. And, silver-pillar arrays with different thickness (202nm~321nm) and silver-nonarod arrays with different thickness (285nm~335nm) were fabricated for studying the optical reflection, transmission and SERS. Silver-pillar arrays were applied in SERS detection for analyte of dye, the signals from Rhodamine 6G (R6G) of dropped on the substrates were detected by excited wavelength at 532nm. The Raman signals measured from silver-pillar arrays increased as thickness increased. Furthermore, in the same condition of measurement, the Raman signals from silver-pillar arrays were better than silver-nanorod arrays. In order to know the electromagnetic enhancement within the nanostructure, finite difference time domain (FDTD) method was applied here to simulate the field enhanced area (hot spots) distribution. The silver-pillar arrays treated as SERS substrates and the Raman signals from substrates could be measured with concentration of R6G in 10-8M.

參考文獻


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