- 學位論文
鋁釹與鉬鈮雙層閘極結構在蝕刻機制之邊緣輪廓及傾斜角研究
The Research about Taper of AlNd and MoNb Stacked Gate Electrode Structure in Etching Process
摘要
在TFT ARRAY製程中需經歷多次成膜，而第一層之閘極金屬對後續絕緣層或金屬層之覆蓋性相對重要。此一關鍵即是閘極金屬蝕刻後邊緣需有平緩之傾斜角，以利各層之覆蓋。本實驗針對應用於TFT閘極之鋁釹、鉬鈮合金雙層構造在酸性蝕刻液中，影響傾斜角之各參數進行探討。實驗共分三個部份，第一部分為各單層合金在酸性蝕刻液中之蝕刻速率研究，第二部份以符合條件之酸性蝕刻液進行鋁釹、鉬鈮合金雙層結構之蝕刻，研究其不同藥液對外觀輪廓及傾斜角度之影響，最後以上機實驗研究機台可控制之各項參數對外觀輪廓及傾斜角之影響。 實驗結果發現不論單酸或混酸濃度升高，鋁釹合金之蝕刻速率隨之增快；而鉬鈮合金之蝕刻速率卻隨之變慢，但在溫度表現上，不論鋁釹或鉬鈮合金都是隨溫度升高而蝕刻速率亦增快。在實驗數據中找出鉬鈮/鋁釹合金蝕刻比在1.7~3.4間之藥液進行雙層蝕刻，發現硝酸在含量較高時，光阻會被蝕刻液反應，因此提早側蝕反應，也因此傾斜角度較為平緩。上機實驗發現溫度、蝕刻時間隨之增加，角度會越加陡峭，而蝕刻方式則因非傾斜式搬送，所以在噴灑和浸泡式蝕刻皆有大量氣泡覆蓋在基板上，比較不同處是噴灑式氣泡較快置換，而浸泡式氣泡不易被置換，此小差異讓整體角度及外觀並無太大之變化。
並列摘要
In the TFT ARRAY need multi thin film process.The first gate electrode metal is very important about upper thin film coverage.For the other thin film easily coverage,The key point that the gate electrode edge must have a gently taper degree after etching.This experiment design to discuss the etching parameter in acid.The reactant is double layers of AlNd and MoNb apply to TFT gate electrode .The first experiment discuss etching rate in the single layer.The second experiment use acid liquid to etching AlNd and MoNb double layers.The acid liquid should conform the conditions that we need.Then discuss the effect of edge surface and taper degree.Last we discuss the effect of each parameter on machine experiment. In the first experiment we discovered etching rate of AlNd is increase follow acid concentration add ,but MoNb is reverse.The effect of temperature,etching rate is increase follow temperature rises on both alloy.We find several acid liquid from first experiment to etching double layers alloy.We discovered photoresist occur reaction with acid and made gently taper degree if nitric acid concentration is 10 %.In machine experiment ,taper degree add follow acid liquid temperature rises and process time add.Maybe we use plane process,the bubble not removed easily.Result no quite a few difference with etching type.