結合磁性材料與半導體材料特性的稀磁性半導體材料一直是研究的課題。近 來有研究團隊指出,將過渡金屬元素摻雜進p-type氧化鋅半導體能夠將居禮溫度 (Tc)提升到室溫以上。 本論文分為兩階段。第一階段以超音波噴霧熱解法成長摻雜銻的氧化鋅薄膜,並由X-ray繞射分析儀確認其結構、利用Hall量測系統確定該薄膜為p-type氧化鋅。第二階段以銻、錳共摻的方式成長ZnMnSbO薄膜,並由X-ray繞射分析儀確認其結構、EDS能量散射光譜儀檢測成分,最後以SQUID超導量子干涉儀量測磁性。 利用X-ray繞射分析儀得知薄膜仍為纖鋅礦結構,並沒有發現氧化鋅以外的繞射峰值;隨著摻雜濃度改變繞射峰角度會跟著偏移 說明摻雜物是以取代的方式進入氧化鋅。最後利用SQUID超導量子干涉儀在室溫(300K)量測出磁滯曲線,因此可以推論該薄膜在300K下具有鐵磁性,且居禮溫度(Tc)超過室溫。
The diluted magnetic semiconductor(DMS) material which combined the magnetic material and material characteristic of the semiconductor has been the subject studied all the time. In this study,at first we deposit the ZnSbO(SZO) films by Ultrasonic Spray Pyrolysis(USP) method.We confirm the structure by X-ray diffraction analysis,and examine the SZO thin films for p-type.Then we deposit the ZnMnSbO (ZMSO) thin films by co-doped antimony and manganese. We establish the structure by X-ray diffraction analysis. Finally,we examine magnetic by SQUID. Superconductive quantum interferercn(SQUID) at the room temperature (300K) measures the curve of magnetism,. So we inference this thin film has ferromagnetism under 300K.The Curie temperature (Tc) Exceed the room temperature.