研究晶圓表面清潔劑對濕蝕刻及乾蝕刻製程上GaAs表面蝕刻狀態 及相對應電性之影響

The research wafer surface cleanser and does in the eclipse cutting regulation to the wet etching the GaAs surface etching condition and the relative electro tropism influence.

葉世偉(Yeh-shih wei)

指導教授 ： 段葉芳

國立臺北科技大學/工程學院/化學工程研究所/碩士(2010年)

摘要

本實驗主要利用不同種化學品(如NH4OH、HCL、HF等)作為乾濕蝕刻前處理之清潔劑，主要是將光阻顯影後所產生知氧化物做有效去除，以避免蝕刻不完全之現象，造成晶圓表面凸點或黑點之產生，實驗中溶液中發現1. HCL / HF作為清洗劑於乾蝕刻實驗中可發現當製程設備轉速越高則會得到較低蝕刻均勻度與較高蝕刻深度的數值；2. 若以蝕刻均勻度與較高蝕刻深度來探討，HF所的數值較佳。標準清洗可藉由乾蝕刻及濕蝕刻製程變化過程中了解其電性變化從圖表中可得知此現象。

關鍵字

濕蝕刻 ； 乾蝕刻 ； GaAs

並列摘要

This experiment mainly makes use of dissimilarity kind the chemicals(like NH4 OHses, HCL, and HF...etc.) is the detergent of dry wet etching pre-baking, mainly is develop a photo-resist behind know that the oxide does to effectively clean to avoid an etching incompletion the creation of phenomemon, cause the creation of convex wafer surface dot or black spot, experiment medium can by dry etching and wet etching manufacturing process the variety understands in the process that it gives or gets an electric shock sex variety.

並列關鍵字

DRY ETCH ； WET ETCH ； GaAs

參考文獻

【2】 Donald A. Neamen, Semiconductor Physics & Devices, Second Edition, Ch. 12. McGraw Hill, 1998.

【3】 M. Hong, 〝SEMICONDUCTOR-INSULATOR INTERFACES〞, p.94

【5】 T. Mimura et al., IEEE Trans. Electron. Devices, 25：573, 1978

【6】 M. Passlack, M. Hong, J. P. Mannaerts, J. R. Kwo, and L. W. Tu, 〝Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy〞, Appl. Phys. Lett. 68 (25), 17 June 1996, p.3605~3607

【7】 M. Passlack, M. Hong, R. L. Opila, J. P. Mannaerts, J. R. Kwo, 〝GaAs surface passivation using in-situ oxide deposition〞Applied Surface Science 104/105 (1996) 441-447