以直流磁控濺鍍法製備氧化鋅鎵薄膜之特性研究

Characteristic of GZO thin films by DC magnetron sputtering

林彥甫(Yan-Fu Lin)

指導教授 ： 陳適範 ； 王錫九

國立臺北科技大學/工程學院/工程科技研究所/碩士(2014年)

https://doi.org/10.6841/NTUT.2014.00873

摘要

本文以GZO陶瓷靶（Ga2O3的含量約0.6 wt.％）使用直流（DC）磁控濺鍍在玻璃基板表面沉積GZO薄膜。藉由改變濺鍍條件中之濺鍍功率、工作壓力及基板溫度的參數，探討製程參數對於沉積GZO薄膜之光學及導電性質的影響。藉由其分析結果定義出最佳製程條件之GZO透明導電膜。最後在最佳製程條件下，經由3 wt.%的靶材的濺鍍後去比較光電特性。分析則採用X-ray去量測GZO薄膜的結晶性。利用掃描式電子顯微鏡觀察表面形態，以霍爾效應的方法量測電阻值，利用UV-vis可見光光譜儀量測薄膜之穿透率。
實驗結果可得各種參數下的0.6 wt.％GZO薄膜具有c軸（002）擇優取向。最佳製程參數為濺鍍功率225 W、工作壓力2.5 mTorr 及基板加熱300 ℃時，電阻值為4.4ⅹ10-3 Ω-cm，可見光的穿透率可達94％。而在相同製程參數下3 wt.% GZO薄膜電阻值可達到4.9ⅹ10-4 Ω-cm。

關鍵字

氧化鋅鎵 ； 透明導電膜 ； 霍爾效應 ； 載子濃度 ； 電阻值

並列摘要

Gallium-doped zinc oxide (GZO) thin film was deposited on glass substrates using the direct-current (DC) magnetron sputtering system with a GZO ceramic target .(The Ga2O3 contents are approximately 0.6 wt.%).The optical and electrical properties of GZO thin films with different deposition parameters ,including sputtering power, working pressure and substrate temperature were investigated .The material characterization includes film thickness using a-step, surface morphology using SEM ,electrical resistance using a Hall-effect method, optical property using UV-VIS spectrometry. Crystallinity is characterized using grazing-angle X-ray.The optical transmittance was determined by the UV-VIS spectrometry. All of the GZO films under various parameter had strong c-axis (002) preferred orientation. The minimum resistivity (4.4ⅹ10-3 Ω-cm) ,carrier concentration of 1.23ⅹ1021 cm-3 and Hall mobility of 1.128 cm2/Vs was obtained at 2.5 mTorr sputtering pressure.The optical transmittance in the visible range was approximately 94%.Under the same process parameters 3 wt.% GZO thin film resistivity can reach 4.9ⅹ10-4 Ω-cm.

並列關鍵字

Gallium-doped zinc oxide (GZO) ； transparent conductive oxide(TCO) ； Hall effect ； Carrier concentration ； Resistivity

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