具有奈米結構氮化銦緻密層及Au奈米粒子之染料敏化太陽能電池之應用

Study of dye-sensitized solar cells with nanostructure InN compact layer and Au nano particles

郭書榮(Shu-Jung Kuo)

指導教授 ： 陳隆建

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2010年)

https://doi.org/10.6841/NTUT.2010.00616

摘要

本論文係研究染料敏化太陽能電池透明導電膜與電解液之間的逆反應情況，利用磁控濺鍍法沉積氮化銦緻密層於透明導電膜表面，以減少電荷複合所造成的轉換效率下降。在光電極摻雜金奈米粒子提升電子傳輸效率，在本研究的染料敏化太陽能電池製程方面，元件光電轉換效率為4~5 ％之間，藉此製程觀察氮化銦緻密層及金奈米粒子對電池特性的影響。在本研究設計五種厚度的氮化銦緻密層，分別為15 nm、30 nm、60 nm和90 nm及120nm。加入金奈米粒子及氮化銦緻密層後，金奈米粒子有改變二氧化鈦光電極導電帶位置的趨勢，使開路電壓提升7 ％達0.7 v。未加入緻密層前，元件的短路電流與轉換效率為15.6 mA/cm2、6.35 ％；氮化銦緻密層有效隔絕透明導電膜與電解液介面間的逆反應(back reaction)發生，使短路電流密度提升48％達23.2 mA/cm2，在AM1.5G(100mW/cm2)光照下,光電轉換效提升40 ％達8.9 ％。

關鍵字

染料敏化太陽能電池 ； 氮化銦 ； 緻密層 ； 金奈米粒子

並列摘要

We presents the dye-sensitized solar cells (DSSCs) with Nitrided indium compact layer (InN-CPL) prepared by magnetron sputtering and doping Au particle in photoelectrode. The InN-CPL effectively reduces the back reaction in the interface between the indium tin oxide (ITO) transparent conductive film and the electrolyte in the DSSC. The Au particles effectively rise inject electrons efficiency. We design a function thickness of InN-CPL. The Au particles effect conduction band of the TiO2 to rise open-circuit voltage to 0.7 v. For the DSSC without InN-CPL, the short-circuit current density and solar energy conversion efficiency are 15.6 mA/cm2 and 6.35 %, respectively. However, DSSCs with InN-CPL effectively rise short-circuit current density. The DSSC fabricated on 90 nm InN-CPL and doping Au particle showed the maximum power conversion efficiency of 8.9 % (AM1.5G) due to effective prevention of the electron transfer to electrolyte. This indicates that the thickness optimization of the InN-CPL is one of the important parameter to obtain high performance DSSCs.

並列關鍵字

DSSC ； InN ； Compact Layer ； Au particle

參考文獻

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