- 學位論文
低溫製程低電阻率GZO透明導電膜的研究開發
Low resistivity gallium-doped Zinc oxide films deposited by low-temperature radio-frequency magnetron sputtering
摘要
本研究利用射頻磁控濺鍍系統（RF magnetron sputtering）將掺雜鎵之氧化鋅(GZO)薄膜沈積於康寧1737F玻璃基板上，所有的試片厚度皆固定約為200nm。所採用之靶材為6英吋Ga-doped ZnO靶材，其中GaO和ZnO的重量百分比為5：95，靶材純度為99.995％。本實驗在濺鍍過程中藉由改變不同濺鍍條件如基板溫度及濺鍍壓力，來探討其對GZO薄膜之晶體結構、導電特性與光穿透性等特性的影響。 X-ray繞射結果顯示。所沈積出來的GZO透明導電膜為擁有（002）優選方位(preferred orientation)的多晶結構，亦即本研究藉由射頻磁控濺鍍技術不論在高溫或常溫製程中已成功於玻璃基板上開發出（002）織構（texure）的GZO透明導電膜；同時從X光繞射結果可知微量掺雜的GZO薄膜的結構與純的ZnO膜相同，具有hexagonal wurzite的晶體結構。本論文中的GZO薄膜，電阻率最低達到6.9×10-4Ω-cm、載子濃度皆大於1020cm-3、載子遷移率也皆高於4 cm2/Vs及其在可見光範圍的波段，穿透率皆大於80%。而常溫製程中的多層膜結構透明導電膜（95nm-GZO/10nm-Au layer/95nm-GZO）因金屬層的貢獻，使得載子濃度大幅提高，將電阻率降低到2.8×10-4Ω-cm，但光穿透率則明顯下降到60%~70%。
並列摘要
In this reseach, the optical, electrical, structure properties of the GZO thin film on Corning 1737 glass substrate with a dimension of 20mm×20mm produced by RF magnetron sputtering has been presented. The film was prepared by commercial available, sintered ceramic ZnO：Ga2O3 (95：5 wt％) target of 6 inch in diameter. The fixed thickness of the GZO film is approximately 200nm. The sputter process conditions in terms of substrate temperature, sputtering pressure, and argon/oxygen flow ratio have been varied to optimize the quality of the GZO film. In X-ray diffraction (XRD) pattern, (002) peak was detected. That indicated this study has been successful to deposite the GZO transparent conductive oxide film with (002) texture on glass substrate. Also from X-ray diffraction analysis, the doped GZO film shows the same hexagonal wurizte structure, as that of pure ZnO film. The average transmittance of GZO film is greater than 80％ in the visible light range while the resistivity is as high as 6.9×10-4Ω-cm, the carrier concentration is in an order of greater than 1020cm-3, and the mobility is greater than 4 cm2/Vs. The low resistivity and high transmittance were achieved with an optimized combination of doped and oxygen vacancy concentration.