有機分子在半導體表面上自組裝行為,近年來被研究的相當廣泛,吸附分子排列方式不同,影響著半導體的表面性質,例如:導電性、化學反應性等。有機官能化的半導體表面也具有應用潛力,例如:生化感測器、表面緩蝕劑、表面絕緣膜、薄膜顯示器等。本實驗嘗試在超高真空的環境下,藉由吸附及熱脫附反應探討反式甲基苯乙烯和反式二苯乙烯在鍺表面上的穩定性。利用低能電子繞射儀(LEED)觀察鍺(100)單晶面在100、200和300 K表面排列的變化。分別在100、300 K一般蒸鍍方式和300 K背景蒸鍍的方式,將反式二苯乙烯蒸鍍到鍺(100)單晶面上,並利用熱程控脫附儀(TPD),固定加熱速率加熱於吸附反式甲基苯乙烯的鍺(100)表面,質譜測得反式甲基苯乙烯母峰(m/z=117)在三個區段有明顯的脫附峰變化,分別為(1)180-215 K, (2)300-400 K及(3)400-550 K。反式二苯乙烯則分別在100、200 K以一般蒸鍍方式和100 K下以背景蒸鍍到鍺(100)單晶面上,反式二苯乙烯母峰(m/z=178)在兩個區段有明顯的脫附峰變化,分別為(1)220-300 K及(2)300-500 K。
Self-ordered organic molecules on semiconductor surfaces have been investigated extensively. The adsorbed molecules arranged in different ways that affect surface properties of the semiconductor, such as conductivity and chemical reactivity. The organic functionalization of semiconductor surfaces possess wide potential applications such as chemical and biological sensors, corrosion inhibition, insulating film and thin film displays. In this work, the adsorption and thermal desorption of trans-methylstyrene (TMS) and trans-stilbene (TS) on Ge(100) have been studied under the ultra-high vacuum (UHV) condition. The Ge(100) single crystal surface structures were observed at 100, 200, and 300 K by low energy electron diffraction (LEED). Ge(100) was exposed to TMS by direct dose at 100 and 300 K, and by background dose at 300 K. The temperature-programmed desorption (TPD) analysis showed three desorption peaks at (I) 180-210, (II) 300-400, and (III) 400-550 K for molecular desorption of TMS from the Ge(100) surface. Ge(100) was exposed to TS by direct dose at 100 and 200 K, and by background dose at 100 K. The TPD analysis showed two desorption peaks at (I) 220-300 and (II) 300-500 for molecular desorption of TS from the Ge(100) surface.