HfSiON閘極氧化層成份對pMOSFET之NBTI與HC效應

NBTI and HC Effects on PMOSFETs Having Different Compositions of HfSiON Gate Dielectrics

黃柏森(Bo-Sen Huang)

指導教授 ： 黃恆盛 ； 陳雙源 ； 王木俊

國立臺北科技大學/機電學院/機電整合研究所/碩士(2008年)

摘要

45 nm世代以下，高介電係數(high-κ)閘極介電層的使用，是必然的趨勢，HfSiON則是最有可能使用的選擇之ㄧ，因為，相較於其他high-κ材料，它有較高的熱穩定性以及較高的遷移率，但是HfSiON的品質和可靠度問題，仍然是令人擔憂的問題。
本研究所使用的MOSFET及MOS電容，來自聯電的90 nm製程，其具有不同成分的HfSiON(H:Si=3:1、1:1、1:3)閘極介電層，研究的主題是探討其NBTI與HC的問題。因此，應力測試的模式有CHC與NBTI兩種，再配合三種溫度及三種電壓的變化。
由實驗結果發現，在CHC應力測試情況下，Hf:Si=1:1 與 3:1 的劣化情形較為嚴重，Hf:Si=1:3 的劣化情形則比較小，而且△Not > △Nit。在NBTI應力測試情況下，Hf:Si=1:1的劣化情形最為嚴重，Hf:Si=1:3 的劣化情形則最小，而且發現△Nit > △Not。

關鍵字

負偏壓溫度不穩定性 ； 可靠度 ； 溫度 ； 劣化

並列摘要

Under 45 nm generations, it is necessary to use high-κ gate dielectrics. HfSiON is one of the most promising candidates because it has high thermal stability and inversion layer mobility comparing with other high-κ materials.
In this work, the tested devices were from 90 nm technology of UMC. These devices having different compositions of HfSiON gate dielectrics (H:Si=3:1、1:1、1:3). This research aimed at studying NBTI and HC reliability under different compositions of HfSiON gate dielectric. Test modes of NBTI and CHC were executed with three kinds of temperatures and voltages.
From experimental results, we find that Hf:Si＝1:1 and 3:1 reveals more severe degradation while Hf:Si＝1:3 reveals smaller comparatively at CHC mode. For NBTI, Hf:Si＝1:1 shows the most severe degradation while Hf:Si＝1:3 shows the smallest degradation. For the degradation mechanisms, △Not were larger than △Nit in CHC, and △Nit were larger than △Not in NBTI.

並列關鍵字

NBTI ； Reliability ； CHC ； Temperature ； degradation

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