- 學位論文
不同閘極金屬氧化鋯鉿鐵電奈米帶無接面場效電晶體經氮氫混合氣體退火之元件特性研究
Effects of Nitrogen and Hydrogen Forming Gas Annealing on HfZrO2 Ferroelectric Dielectric Nanosheet Junctionless FETs with Different Metal Gate Materials
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- Chen, M. H. (2017). 臨場方式原子層沉積高介電常數氧化物及金屬閘極之高性能砷化銦鎵自我對準反轉通道金氧半場效應電晶體之研究 [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU201703516
- 吳婷婷 (2015). 藉由超音波霧化熱裂解沉積技術研製具有氧化鎂閘極介電層之氮化鎵/氮化鋁鎵/氮化鎵金屬-氧化物-半導體高電子遷移率電晶體 [master's thesis, Feng Chia University]. Airiti Library. https://doi.org/10.6341/fcu.M0203900
- Huang, L. T. (2013). Nitrogen and Interface Engineering of HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition [doctoral dissertation, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2013.10313
- 許展瑋（2017）。Sandwiched Nanostructure of Hydrogenated Carbon Doped TiO2 Nanoparticle/Nitrogen Doped Carbon/Rutile TiO2 Nanorod Array for Efficient Photoelectrochemical Water Oxidation〔碩士論文，國立清華大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0016-0401201816041764