- 學位論文
具有不同閘極結構之增強型氮化鋁鎵/氮化鋁/氮化鎵異質結構場效電晶體之研製
Investigations on Enhancement-Mode AlGaN/AlN/GaN Heterosturcture Field-Effect Transistors with Different Gate Designs
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延伸閱讀
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- Weng, K. L. (2015). 增強型氮化鋁鎵/氮化鎵金屬-絕緣體-半導體高電子遷移率電晶體之臨界電壓模擬研究 [master's thesis, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2015.00861
- Yang, J. Y. (2022). 短閘極場效電板增強型氮化鋁鎵/氮化鎵高電子遷移率電晶體製作與電流特性分析 [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU202200208
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- 林淵博（2019）。Asymmetric Spacer Design for Underlap Gate-All-Around Field-Effect Transistors〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU201904381