應用於OFDM系統具增益控制之主被動式偏壓微波功率放大器設計

The Study & Implementation of Active & Passive Biased Power Amplifier Designs with Smooth Gain-Control Characteristics for OFDM System Applications

林永昌(Yuan Chung Lin)

指導教授 ： 黃建彰

元智大學/工程學院/通訊工程學系/碩士(2004年)

摘要

本論文以單晶微波積體電路(MMIC)製程設計線性微波功率放大器，此功率放大器設計針對無線區域網路(Wireless LAN)IEEE 802.11a之應用，相關之特性參數如輸出功率、鄰近通道功率比以及調變失真度..等各項數據，均加以考量。設計的電路包含一個被動式偏壓電路，一個主動式電流鏡偏壓電路。此外還設計一個增益控制機制的功率放大器，以上三個電路均操作在5.3GHz頻帶。主動元件採GaAs異質接面電晶體相關電路模型參數由穩懋半導體公司(Win Foundry)以及國家晶片中心(CIC)之全球聯合通訊公司(GCTC)所提供，並進行相關的製程作業。

關鍵字

異質接面雙載子電晶體 ； 微波功率放大器 ； 誤差向量幅度 ； 相鄰通道功率比

並列摘要

In this thesis, the linear power amplifier (PAs) used for wireless LAN 802.11a standard are studied & designed by using the monolithic microwave integrated circuit (MMIC) processes. The relevant performance parameters of PAs such as output powers, adjacent channel power ratio(ACPR), and error vector magnitude(EVM) are considered carefully for the system applications. The designed circuits include a passive biased PA and an active one─using the current mirror techniques. In addition, a smooth gain-control PA is also investigated to provide more control-function capability for the system.
(All these PAs are operated at 5.3GHz bands)
The IC process are supported by the Win Semiconductor Inc, and the Global Communication Tech Corp (Via Chip Implementation Center, CIC) In GaAs heterojunction bipolar transistors (HBTs) with the associated modeling facilities.

並列關鍵字

HBT ； Power Amplifier ； EVM ； ACPR

參考文獻

[1]S.C.Cripps, RF Power Amplifiers for Wireless Communicatoins, Artech House,Mar. 1999.

[2]C. Duvanaud, S. Dietsche, G.. Pataut, and J. Obregon, “High-Efficiency Class F GaAs FET Amplifiers Operating with Very Low Bias Voltages for Use in Mobile Telephones at 1.75 GHz,” IEEE Microwave and Guide Wave Letters, Vol.3, Aug.1993, pp.268-270.

[3]Guillermo Gonzalez, “Microwave Transistor Amplifiers Analysis and Design” second edition, Prentice Hall, Upper Saddle River, New Jersey 1997.

[4]F.H. Raab, “Class-F Power Amplifiers with Maximally Flat Waveforms,” IEEE Trans. Microwave Theory and Techniques, Volume: 45, Issue: 11 , Nov. 1997, pp.2007 — 2012.

[5]Marian Kazimierczuk, “Effects of the Collector Current Fall Time on the Class E Tuned Power Amplifier, ” IEEE J. Solid-State Circuits, Apr.1983, pp. 181- 193.