- 學位論文
具同質P-N接面的二氧化鈦電極製作
Fabrication of titania electrodes with a p-n homojunction
摘要
本研究設計與製作具同質P-N接面的多層二氧化鈦電極元件。首先以溶凝膠法製作奈米二氧化鈦薄膜電極，並摻雜微量的金屬離子（Fe3+、Cr3+）改變電極薄膜的特性而製作出P型陶瓷半導體。最後與商業粉末二氧化鈦P25製作的N型陶瓷半導體搭配，製作出具P-N接面的多層電極。研究結果顯示，摻雜金屬離子的二氧化鈦的確與單純二氧化鈦的材料性質有所不同。而以0.25mole％Fe3+或Cr3+的金屬離子摻雜，經過400℃燒結後，在I-V曲線中表現的整流效應，是較為明顯的。同時不同金屬離子的摻雜與薄膜厚度也會影響薄膜的I-V曲線特性。本研究所設計的P-N接面二氧化鈦電極薄膜，在整流效應的表現確實比傳統P25二氧化鈦電極來的明顯。期望可利用P-N接面所產生的內部電場力，改良電極傳遞電子的效率。最終達成提升染料敏化太陽光電池效率的目的。
並列摘要
The research designed and fabricated a p-n homojunction multiple titania layers electrode. First, fabricating nano-titania electrode by sol-gel method and doping metal ions ( Fe3+、Cr3+ ) changed electrode characteristic to fabricate P-type ceramic semiconductor. At last, the p-n junction multiple titania electrode composed of P-type titania doped metal ions and N-type ceramic semiconductor fabricated by commercial powder P25. The result showed that material properties of titania doped metal ions was different from pure titania. The I-V curve perform clear rectification when giving a doping metal ions ( Fe3+、Cr3+ ) level was 0.25mole% after sintering 4000C. It also influenced electrode I-V curve characteristic by doping different kinds of metal ions and coating different thickness of film. The p-n junction titania electrode designed by the research certainly perform clear rectification to P25 titania electrode. We hope it could improve the efficiency of electrode transmtting electron by the electric field force formed with p-n junction. Finally, reaching the purpose to improve the efficiency of dye-sensitized solar cell.