電鍍填孔機制及其場流分析之研究

The mechanism of via filling and its study on fluid fields

余丞宏(Cheng-Hung Yu)

指導教授 ： 劉宗平

元智大學/電機通訊學院/電機工程學系/碩士(2008年)

https://doi.org/10.6838/YZU.2008.00151

摘要

本文運用電鍍填孔實驗和SIMPLER之數值模擬法，研究實驗因子以及邊界質傳係數兩種因素，對填孔機制與空洞形成的影響。
針對雷射鑽孔所形成的微盲孔，運用垂直連續式及水平式電鍍設備，研究設備參數影響填孔行為之可能因子，再利用田口分析，得到孔徑大小和電流密度是影響填孔機制的主要因子，實驗結果並支持表面抑制與孔底加速理論。
利用SIMPLER方法進行流場的數值模擬，透過收斂後的壓力與速度場，計算邊界質傳係數與Sherwood數，得到流場對孔底質傳之加速最有助益，模擬數據也與實驗的結果相符。

關鍵字

填孔 ； 流場數值模擬 ； 盲孔 ； 田口法

並列摘要

Using experiment on via filling and numerical simulation method of SIMPLER in this thesis to study the influence of mechanism of via filling and void forming for both experimental factor and mass transfer coefficient at the boundary.
It focuses on the blind via made by laser drill and use vertical continuous and horizontal plating line to do the plating. Any proper factor in via filling influenced by equipment parameters has been studied. Thereafter, using Taguchi method to define the main factors of mechanism of via filling and the factors are open diameter and current density. The experimental results support the theories of inhibition on the surface and the theories of accelerator on the bottom.
We use the SIMPLER method to do the numerical simulation of fluid field, and then use convergence values of pressure and velocity to calculate the mass transfer coefficient and Sherwood number. We found the fluid field improves the accelerator of mass transfer on the bottom of the hole and the simulation values are conformed to experimental results.

並列關鍵字

via filling ； numerical simulation on fluid field ； blind via ； Taguchi method ； SIMPLER

參考文獻

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