隨著科技日新月異,記憶卡產品更朝向輕薄短小、高容量的趨勢,逐漸成為微電子領域最終產品功能的重心。對於手機、寬頻設備、聯網元件、汽車模組、電腦、相機…等皆是如此,其中關鍵製程則在於堆疊構裝作業(Package-on-Package) 之發展。堆疊構裝中,因各元件垂直堆疊組成,內部結構較傳統構裝複雜,各材料間性質的差異將衍生出基板翹曲問題,因此對於翹曲(warpage)問題也日益受到重視。鑒於目前表面黏著製程(經高溫迴焊)後造成基板有翹曲現象,本研究針對SMT迴焊製程後基板翹曲提出一最佳化烘烤參數,提升基板平整度品質,減少報廢與重工之成本浪費。本研究探討SMT迴焊製程後基板翹曲,本研究使用非接觸式深度量測顯微鏡量測其基板翹曲,並運用實驗設計 (Design of Experiment,DOE),對此基板翹曲進行資料蒐集,其後利用反應曲面法找尋最佳烘烤參數組合,以期能改善上片(Die Bond,DBD)、銲線(Wire Bond,WBD)製程因基板翹曲而造成晶粒崩裂、被動元件銲墊剝離等異常。溫度、時間、壓塊為考量的因子,利用23 因子設計、CCD設計及反應曲面方法,經由實驗我們得到二次迴歸方程式,並歸納出當溫度設定為175℃,時間1.5hr及,壓塊重量5kg時,基板翹曲會低於9mil,可以有效地降低現有之翹曲幅度。
By the rapid advancement of technology, memory cards tend to be lighter, thinner, with higher capacity, and gradually become the forefront of microelectronics endproduct functionality. This is true for mobile phones, broadband devices, networking components, automotive modules, computers, digital cameras and etc. The critical process is based on the development of Package-on-Package Solution. The internal structure of the stacked package is more complicated than that of traditional package because components are vertically stacked. The difference of properties among all materials will result in substrate warpage. As a result, the issue of warpage also becomes more and more important. In light of the current surface mount technology which causes the substrate warpage after high-temperature reflow soldering, this research proposes a baking parameter of optimization in order to enhance the flatness of substrate and reduce any waste of discard and rework. This research probes into the substrate warpage after reflow soldering by surface mount technology. It utilizes the non-contact thickness measuring microscope to gauge the substrate warpage, as well as Design of Experiment to proceed with information collection. Subsequently, Response Surface Methodology is adopted to figure out the optimized combination of baking parameters, and expects to improve abnormalities, including grain collapse, bond pad metal peeling and etc., resulted from the substrate warpage in the processes of Die Bond and Wire Bond. Temperature, time and contact chuck are the factors for consideration. Utilizing the design of 23 factors, CCD Design and Response Surface Methodology, we can acquire a quadratic regression equation by experiments and induce that the existing warpage range can be effectively reduced to below 9 mil when the temperature is set as 175℃ with the time period of 1.5 hours and the contact chuck of 5 kilograms.