本研究目的為以不鏽鋼作為基材於上製備太陽能電池,研究不鏽鋼基材表面形貌對電池效率之影響,並討論金屬基材製備阻絕層對於太陽電池效率之影響。本實驗中選用厚1.0 mm的SS304與SS430不鏽鋼片作為電池基材,並用電化學機械拋光法(ECMP)與電解拋光法(EP)處理基材表面。以ECMP處理SS304不鏽鋼試片表面後可將原始平均粗糙度Ra=0.033 μm降低至Ra=0.022 μm;SS430不鏽鋼試片之原始平均粗糙度Ra=0.038 μm可降低至Ra=0.023 μm。初始太陽電池效率SS304試片1.7 %; SS430試片為1.6 %,而經過ECMP處理後SS304試片效率提升為3.7 %,SS430試片為4.0 %。以EP處理SS304試片後則原始平均粗糙度為Ra=0.052 μm,其太陽電池效率為3.2 %。並於電池中加入一層15 nm 厚的AZO緩衝層嘗試提升電池短路電流表現,經實驗後可得ECMP後SS304試片最佳效率4.49 %;SS430試片最佳效率為4.4 %,而EP處理後SS304試片則有最佳電池轉換效率為3.84 %。
In this paper, we fabricated amorphous silicon thin film solar cells on stainless steel substrate, and investigated the effects of different substrate surface morphologies for original and samples treated by electrical chemical mechanism polish process (ECMP) and electro polishing (EP). We also dicussed the influence of barrier layer to silicon layer by SIMS results. We used the SS304 and SS430 stainless steel with thickness 1.0 mm as substrate for solar cell. We have measured the roughness and surface morphology of the original and the treated samples by surface profiler and optical microscopy, and compared the solar cells performances fabricated of these substrates. The preliminary results showed the photovoltaic conversion rate of the original SS304 and SS430 stainless steels with Ra roughness value of 0.033 μm and 0.038 μm were 1.7% and 1.6%, respectively. After the ECMP polishing process, the Ra roughness values of the SS304 and SS430 samples were down to 0.022 μm and 0.023 μm, and conversion efficiency increased to 3.7% and 4.0% conversion rate, respectively. The sample treated with EP has surface roughness Ra=0.052 μm and the efficiency 3.2 % were obtained. To improve the short current, we tried to add an AZO layer with 15 nm thickness between silver and silicon layer as buffer layer. The results showed that the buffer layer could help successfully to improve the cell performance, and the best cell conversion efficiency on ECMP treated stainless steel substrates were obtained by SS304 for 4.49 %, SS430 for 4.4 %, and the EP treated sample with 3.84 %.