磷化鋁鎵銦發光二極體表面粗化提升光取出效率之研究

Enhancement of light extraction efficiency by surface roughening of AlGaInP LED

鄧有財(Yu-Tsai Teng)

指導教授 ： 陳念波

元智大學/電機通訊學院/電機工程學系/碩士(2012年)

摘要

本文主要在研究使用濕式蝕刻方式,在N型AlGaInP 表面進行粗化對於光萃取的增加有重要性的影響,因AlGaInP LED元件之材料折射係數約為3.4，空氣折射係為1，經由Snell Law所計算出全反射臨界角約為17‘，此角度限制了光取出效率。有效的粗化N型AlGaInP 表面會形成規則的片狀錐體。我們使用鹽酸(HCL)蝕刻N型AlGaInP, 隨著時間增加使用SEM及AFM來觀察外觀形態的變化,量測結果顯示固定20mA電流下,表面粗化元件較平面元件提升85.2% 。

關鍵字

發光二極體 ； 磷化鋁鎵銦 ； 粗化 ； 光取出

並列摘要

In the thesis, we investigate the Wet etching method,
N-Type AlGaInP LED with surface roughening to enhance light extraction efficiency of research. light crosses an interface from AlGaInP materials with a refractive index of 3.4 to air with a refractive index of 1 results in a small escape cone with an escape cone angle of 17' for emitted light, representing most total internal reflection light.
In this research, the light extraction would be improved by modifying the critical angle. The manufacturing of wet etch is applied on N-type AlGaInP surface of LEDs with different HCL. On the optical characteristics, the surface roughening LEDs increased 85.2% as compared with the original LEDs at 20mA.

並列關鍵字

LED ； AlGaInP ； Roughening ； light extraction

參考文獻

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AlGaInP light-emitting diodes in the 555–620 nm spectral region using