- 學位論文
利用奈米氧化鋅/二氧化鈦製作與設計陶瓷電晶體組合邏輯元件之探討
Investigation of fabrication and design of ceramic field-effect transistor-transistor logic devices using nano-ZnO/TiO2
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摘要
本研究利用濕式塗佈法將氧化鋅與二氧化鈦溶液製成薄膜，設計製作出N通道與P通道場效陶瓷電晶體(Field Effect Transistor；FET)，並將電晶體元件串聯組裝可得具有反相器(Inverter)效應之邏輯元件。利用氧化鋅與二氧化鈦溶液分別塗佈製成雙層膜，製作出異質接面之二極體元件，再設計製作成背閘極式的電晶體元件，結果顯示當TiO2層為閘極、ZnO層為源極與汲極時，可得N通道場效電晶體(N-FET)；若以ZnO層為閘極、TiO2層為源極與汲極，則可得P通道場效電晶體(P-FET)。將N-FET或P-FET分別串聯組裝，可得具有反相器(Inverter)效應之邏輯元件。
並列摘要
The inverter circuits were designed and fabricated by the combinations of ceramic-based N-channel and P-channel field-effect transistors (FETs). Both of the ceramic-based transistors, consist of ZnO and TiO2 films, were fabricated using ZnO and TiO2 solution samples by wet coating technique. Different sequences of ZnO and TiO2 thin films were characterized as diodes and performed in different current-voltage characteristics. The transistors were designed as a bottom-gate configuration on ITO glass substrate. Results showed that the N-channel FET (N-FET) can be performed if the TiO2 film was coated on ITO as the gate and two ZnO films were fabricated on top of the TiO2 film as the source and drain regions. On the contrary, if the ZnO film was made on ITO as the gate and two TiO2 films were produced on top of the ZnO film as the source and drain regions, the P-channel FET (P-FET) can be obtained. The inverter circuits can be further fabricated using the combinations of the P-FET and N-FET devices.
參考文獻
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