設計與製作組裝式陶瓷電晶體元件之探討

Investigation of design and fabrication of assembled ceramic transistor devices

李楷國(kai-kuo Li)

指導教授 ： 廖朝光

元智大學/工程學院/化學工程與材料科學學系/碩士(2012年)

摘要

本研究採用ZnO與TiO2的半導體薄膜，利用組裝式方法設計製作出背閘極式的陶瓷電晶體元件。以ZnO、TiO2和在這二種溶液當中添加金屬離子(Zn2+、Cr3+)，製備出不同的陶瓷溶液，利用旋轉塗佈法個別塗佈於二片ITO上，以膜對膜的方式覆蓋，經過450℃熱處理，發現組裝出的二層薄膜，可產生二極體的整流(Rectifying)現象。取ZnO與TiO2二種薄膜，加以組裝設計，分別設置出閘極(gate)、源極(source)與汲極(drain)區域，製作出背閘極式陶瓷電晶體元件。結果顯示，以TiO2膜為閘極，二片ZnO膜為源極與汲極區域，所設計組裝的元件，經電性量測分析為N通道的場效電晶體（N-channel field effect transistor，N-FET）。反之，以ZnO膜為閘極，二片TiO2膜為源極與汲極區域，經電性量測為P通道的場效電晶體（P-channel field effect transistor，P-FET）。將摻雜不同金屬離子的陶瓷溶液搭配組裝成電晶體，比較電性發現ZnO為閘極與摻雜鉻離子的二氧化鈦(TiO2:Cr)當做源極與汲極為較好的P-FET；當TiO2為閘極與ZnO為源極與汲極時組裝出的N-FET，具有相對較高的on/off ratio，將來期許能利用P-FET或N-FET做出反相器(inverter)等邏輯元件。

關鍵字

場效電晶體 ； 組裝式元件 ； 二氧化鈦 ； 氧化鋅

並列摘要

Back-gate ceramic transistors were designed by assembly approaches and fabricated using ZnO and TiO2 semiconductor films. The ZnO and TiO2 films were prepared from the ceramic solution with/without the additives of metal ions (Zn2+ and Cr3+). Both of the prepared films were covered each other and heated up to 450°C. Results showed that the thermally treated two-layer films assembled together demonstrated a diode performance. The back-gate transistor can be designed assembly by either one of the film (i.e. ZnO) on ITO as the gate and the other one (i.e. TiO2) to construct as a source and a drain. If the TiO2 film was taken as the gate, and two ZnO films covered on top of the TiO2 film were set as the source and the drain, respectively, the device revealed an N-channel field-effect transistor (N-FET). On the contrary, if the ZnO film as the gate, and two TiO2 films were the source and the drain, a P-channel field-effect transistor (P-FET) was found from the I-V data analysis. The assembly of the ZnO and the TiO2:Cr films as the transistor showed the best electronic performance for the P-FET device; whereas, the ZnO together with TiO2 films can assemble the best N-FET device among the samples due to a higher on/off current ratio. Transistor logic devices are expected to be designed using the P-FET and the N-FET in the future.

並列關鍵字

Field effect transistor ； assembled device ； TiO2 ； ZnO

參考文獻

6.周文偉, 利用奈米二氧化鈦設計與製作場效電晶體元件. 元智大學碩士論文(2008). p.5.

2.O'Regan, B., Grätzel, M., A low-cost, high-efficiency solar cell based on dye-sensitized colloidal TiO2 films. (1991) Vol 353:p.737~740.

4.Katayama, Masao, Field-effect transistor based on atomically flat rutile TiO2. Applied Physics Letters, (2006). Vol.89(24):p. 242103-242105.

12.Park, C.H.L., K.H.; Oh, Min Suk;Lee, K.;Im Seongil; Lee, B.H.; Sung, M.M., Dual Gate ZnO-Based Thin-Film Transistors Operating at 5 V: NOR Gate Application. (2009). Vol.30(1): p. 30-32

13.Yudai Kamada , Shizuo Fujita, Takahiro Hiramatsu, Tokiyoshi Matsuda, Mamoru Furuta, Takashi Hirao, Analysis of subthreshold photo-leakage current in ZnO thin-film transistors using indium-ion implantation. Solid-State Electronics, (2010). Vol.54(11):p.1392-1397.