氧化銦錫材料良好的導電特性與高可見光透光率、高紅外光反射率,非常適合做為透明導電氧化物。本文以磁控濺鍍機於Corning Eagle 2000玻璃基材表面濺鍍氧化銦錫薄膜,探討濺鍍功率、薄膜厚度、製程溫度、通氧量與退火熱處理對氧化銦錫薄膜光學與電學性質之影響。另再以原子力顯微鏡與表面輪廓儀觀察薄膜表面微結構形貌及粗糙度。濺鍍功率包含50、100、150、200W等四種、薄膜厚度包含112、208、305、405nm等四種,以紫外線/可見光分光光譜儀檢測光學性質,以霍爾效應檢測電學性質,實驗結果顯示,薄膜穿透率隨著濺鍍功率的增加,可見光平均穿透率略為下降,薄膜電阻值隨濺鍍功率增加而上升;可見光穿透率也隨著膜厚的增加而降低,薄膜電阻值則隨膜厚增加而下降。製程溫度包含室溫25℃、100、200、275℃等四種,實驗結果顯示,薄膜穿透率隨著製程溫度的增加可見光平均穿透率略為上升,薄膜電阻值隨著製程溫度增加而下降。 退火熱處理包含150、250、350、450℃等四種不同溫度,探討退火熱處理對氧化銦錫薄膜光學和電學性質之影響。實驗結果顯示薄膜穿透率隨著退火溫度增加而上升,薄膜電阻值隨著退火溫度增加而下降,載子濃度與遷移率隨著退火溫度增加而增加。
Indium tin Oxide (ITO) with high transparence in visible zone, high reflectivity in near infrared zone, and low resistivity has been widely used in transparent conducting electrodes. In this work, ITO were deposited on the glass substrate (corning Eagle 2000) by reactive rf magnetron sputtering. The microstructure morphology of the ITO films were examined by atomic force microscopy (AFM). The effects of sputtering power, film thickness, and substrate temperature on the optical and electrical properties of ITO films were investigated using UV/Visible spectrophotometer and Hall measurement. Experimental results show that the resistivity of the ITO films is decreaseing with the increase of film thickness and substrate temperature. The transmittance of ITO film is deceaseing with the increase desputtering power and film thickness. In addition, the effects of annealing temperature on the optical and electric properties of ITO film were studied. The transmittance of ITO film is inceaseing with the increase of annealing temperature. The resistivity of ITO films is decreasing with the increase of annealing temperature.